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ADG1421BRMZ

SPST iCMOS switch, 1.0R Ron, +/-15V, 800MHz, -5pC injection, MSOP-10

4100

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Pieza del fabricante：

ADG1421BRMZ

Paquete：

MSOP-10 (3.00 x 3.00 x 0.85 mm)

Marca：
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Descripción

Productos

The ADG1421BRMZ from Analog Devices is a single-pole/single-throw (SPST) iCMOS analog switch in a 10-lead MSOP package. With 1 Ohm typical on-resistance, +/-15V/+12V supply capability, and rail-to-rail signal handling, it is designed for precision signal routing applications.

Especificaciones

Configuración 1 x SPST (normally open)
On Resistance (typ) 1.0 Ohm
On Resistance (max) 1.8 Ohm
Ron Flatness 0.2 Ohm typical
Tensión de alimentación +/-5V to +/-15V dual, or +12V single
Signal Range VSS to VDD (rail-to-rail)
Switching Time 120ns ton, 60ns toff
Charge Injection -5 pC typical
Off Leakage 100 pA max
Bandwidth 800 MHz
Temperatura de funcionamiento -40°C to +125°C
Paquete MSOP-10

Características

  • 1.0 Ohm typical on-resistance with 0.2 Ohm flatness for minimal signal distortion
  • 800MHz bandwidth for high-frequency signal routing

Aplicaciones

  • Precision signal routing and relay replacement

The ADG1421BRMZ from Analog Devices is a single-pole/single-throw (SPST) analog switch fabricated in iCMOS (industrial CMOS) process technology. The device features an exceptionally low 1.0 Ohm typical on-resistance with 0.2 Ohm flatness across the analog input range, making it ideal for precision signal routing where signal integrity is critical. The switch handles rail-to-rail analog signals with supply voltages from +/-5V to +/-15V dual supply or +12V single supply. The 800MHz bandwidth supports high-frequency applications. Charge injection is only -5pC typical, minimizing signal perturbation during switching transitions. The device is available in a compact MSOP-10 package suitable for space-constrained designs.

The ADG1421BRMZ is a single-channel analog switch using iCMOS technology. (1) Switch Structure: The switch uses a parallel N-channel and P-channel MOSFET pair. When the IN control pin is logic high, both MOSFETs are turned on, providing a low-impedance path between S and D terminals. The complementary structure ensures flat Ron across the full signal range from VSS to VDD. (2) Low Ron: Large-geometry MOSFETs in the iCMOS process achieve the 1.0 Ohm typical on-resistance. (3) Charge Injection: The -5pC charge injection is achieved by carefully matching the N-channel and P-channel gate charge contributions, which partially cancel each other.

Pin Nombre Función
1 S Source terminal
2 D Drain terminal
3 VSS Negative supply
4 GND Suelo
5 EN Control input (high=on)
6 VDD Positive supply
7-10 NC Sin conexión
  • Precision signal routing with 1 Ohm Ron and 800MHz bandwidth
Fabricante Número de pieza Paquete Notas
ADI ADG1422BRMZ MSOP-10 NC (normally closed) version
ADI ADG1411BRMZ MSOP-10 1.5 Ohm, quad switch
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