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ADG1209YRUZ-REEL7

Dual 4:1 mux, 200ohm, 550MHz BW, 0.4pC, +/-15V, TSSOP-16

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Pieza del fabricante：

ADG1209YRUZ-REEL7

Paquete：

16-Lead TSSOP (5.0 x 4.4 x 1.05 mm)

Marca：
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Compromiso de calidad
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Descripción

Productos

The ADG1209YRUZ-REEL7 is an Analog Devices low-capacitance dual 4:1 iCMOS multiplexer with 200 ohm on-resistance, +/-15V supply, 550MHz bandwidth, and 0.4pC charge injection. Packaged in 16-lead TSSOP, -40C to +125C (Y-grade).

Especificaciones

Configuración Dual 4:1 multiplexer
Ron 200 ohm typical
Bandwidth 550 MHz
Charge Injection 0.4 pC
Supply +/-5V to +/-16.5V
Crosstalk -85 dB @ 1MHz

Características

  • Dual 4:1 multiplexer (SP4T x2)
  • 200 ohm on-resistance
  • 550MHz -3dB bandwidth
  • 0.4pC low charge injection
  • +/-5V to +/-16.5V supply range
  • -85dB crosstalk at 1MHz
  • 95ns on, 100ns off switching

Aplicaciones

  • High-speed signal routing
  • Medical ultrasound switching
  • Data acquisition multiplexing
  • Video signal routing

The ADG1209YRUZ-REEL7 is an Analog Devices low-capacitance dual 4:1 iCMOS multiplexer providing two independently controlled 4:1 multiplexer channels in a single 16-lead TSSOP package. The iCMOS process enables +/-15V dual supply operation with 200 ohm typical on-resistance and excellent on-resistance flatness across the signal range. The 550MHz -3dB bandwidth and 0.4pC charge injection make it suitable for high-speed signal routing and precision sampled-data systems where charge injection errors must be minimized. The -85dB crosstalk at 1MHz ensures minimal inter-channel interference. The 1.5pF off-capacitance and 4.5pF drain-capacitance provide low capacitive loading for high-frequency signals. The Y-grade temperature range extends to -40C to +125C for industrial applications.

The ADG1209 contains two independent 4:1 multiplexer channels, each with four source inputs (S1-S4), one drain output (D), and 2-bit address (A0-A1) plus enable (EN) control. For each channel, the address selects which of the four source inputs connects to the drain output through a CMOS transmission gate. The transmission gate consists of parallel NMOS and PMOS switches that provide rail-to-rail signal capability with low on-resistance. Break-before-make switching logic ensures that the previously selected switch fully opens before the new switch closes, preventing momentary channel-to-channel short circuits. The low-capacitance iCMOS process minimizes parasitic capacitances (1.5pF CS(off), 4.5pF CD(off)), preserving signal integrity at high frequencies and minimizing charge injection.

Pin Mnemonic Descripción
1 A0 Address bit 0
2 ES Enable (active high)
3 VSS Negative supply
4-7 S1A-S4A Channel A source inputs
8 DA Channel A drain output
9 DB Channel B drain output
10-13 S4B-S1B Channel B source inputs
14 VDD Positive supply
15 GND Suelo
16 A1 Address bit 1
  • High-speed medical ultrasound transducer switching with 550MHz bandwidth
  • Precision data acquisition multiplexing with 0.4pC charge injection
  • Video signal routing with +/-15V supply and -85dB crosstalk
  • Industrial process control analog signal selection
Modelo Fabricante Diferencia clave
ADG1209ARSZ-RL7 ADI SOIC-16 package
ADG1208YRUZ ADI 8:1 single mux
MUX36D4 TI Similar dual 4:1
DG408 Renesas 8:1 mux, similar
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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