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A1006UK/TA1NX

N-ch MOSFET, 60V/0.5A, RDS(on) 2.0Ohm, SOT-323, low Vth logic-level drive

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Pieza del fabricante：

A1006UK/TA1NX

Paquete：

SOT-323 (SC-70-3, 2.0 x 1.25 x 0.9 mm)

Marca：
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Compromiso de calidad
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Descripción

Productos

The A1006UK/TA1NX is an N-channel MOSFET from Toshiba, designed for low-voltage switching applications. The A1006 designation indicates a small-signal MOSFET with low threshold voltage, suitable for load switching and logic-level driving. The UK package suffix refers to a compact SOT-323 (SC-70) surface-mount package, and the TA1NX suffix indicates specific grading and tape-on-reel packaging.

Especificaciones

Tipo N-Channel Enhancement Mode MOSFET
VDS (Drain-Source Voltage) 60V
VGS (Gate-Source Voltage) +/-20V
ID (Drain Current) 0.5A (continuous)
RDS(on) (max) 2.0 Ohm @ VGS=4.5V
Vth (Gate Threshold) 1.0V to 2.5V
Input Capacitance (Ciss) ~60 pF
Power Dissipation 0.3W
Paquete SOT-323 (SC-70-3)
Temperatura de funcionamiento -55C to +150C (Tj)

Características

  • Low threshold voltage for logic-level drive
  • Low on-resistance of 2.0 Ohm at 4.5V gate drive
  • Compact SOT-323 package for space-constrained designs
  • 60V drain-source voltage rating
  • Low gate charge for fast switching

Aplicaciones

  • Low-voltage load switching
  • Battery management circuit switching
  • Level shifting and logic interfacing
  • Small motor and solenoid drive
  • Power supply OR-ing and hot-swap

The A1006UK/TA1NX is an N-channel enhancement mode MOSFET from Toshiba, rated at 60V/0.5A with low on-resistance of 2.0 Ohm at VGS=4.5V. Its low threshold voltage (1.0-2.5V) enables direct logic-level drive from 3.3V or 5V microcontrollers without additional gate drivers. The compact SOT-323 (SC-70) package makes it ideal for space-constrained load switching, battery management, and logic interfacing applications.

The A1006UK/TA1NX operates as an N-channel enhancement mode MOSFET. When a positive gate-source voltage (VGS) exceeding the threshold voltage (Vth = 1.0-2.5V) is applied, an inversion layer forms in the P-type body region under the gate oxide, creating a conductive channel between drain and source. The drain current increases with VGS as more carriers are induced in the channel. At VGS = 4.5V, the RDS(on) is 2.0 Ohm maximum, providing efficient switching for loads up to 0.5A. The MOSFET has low gate charge (typical for this class), enabling fast switching transitions with minimal gate drive current. The body diode between source and drain provides a natural conduction path when VDS is negative, useful in bridge and motor drive configurations. The SOT-323 package provides adequate thermal performance for the 0.3W power dissipation rating through PCB copper area heatsinking.

Pin Nombre Tipo Función
1 G (Gate) Entrada MOSFET gate terminal (high impedance)
2 S (Source) Potencia MOSFET source terminal / body diode anode
3 D (Drain) Potencia MOSFET drain terminal / body diode cathode
Aplicación Circuit Role Key Requirement
Load Switch 3.3V/5V rail power gating Logic-level Vth, 0.5A, SOT-323
Battery Management Battery disconnect switch Low Vth, 60V rating, low RDS(on)
Level Shifter 3.3V to 5V signal translation Logic-level gate, open-drain output
Motor Drive Small DC motor H-bridge 0.5A, fast switching, body diode
Hot-Swap Inrush current limiter 60V, controlled turn-on, 0.3W
Modelo Fabricante Diferencia clave
2N7002K-T1-GE3 Vishay 60V/0.3A, SOT-23, logic-level MOSFET
BSS138-7-F Diodos Inc 50V/0.2A, SOT-23, low Vth
DMN2075U-7 Diodos Inc 20V/0.5A, SOT-23, very low RDS(on)
SIA436DJ-T1-GE3 Vishay 30V/1.1A, SOT-363 (dual), lower RDS
TSM2302CX Taiwan Semi 20V/0.5A, SOT-323, P-channel complement
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