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1N4733ATR

5.1V 1W zener diode, 7 Ohm Zzt, DO-41 axial, AEC-Q101

10380

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Pieza del fabricante：

1N4733ATR

Paquete：

DO-41 / DO-204AL (Axial, 2.6mm dia x 4.1mm length)

Marca：
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Compromiso de calidad
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Descripción

Productos

The 1N4733ATR is a 5.1V, 1W zener diode in a DO-41 axial lead package. Part of the industry-standard 1N4728A-1N4758A series, it provides ±5% voltage tolerance with 7 Ohm maximum zener impedance at 49 mA test current.

Especificaciones

Zener Voltage (Vz) 5.1 V (nominal)
Vz Tolerance ±5%
Power Dissipation 1 W (at TL ≤ 50°C)
Test Current (Izt) 49 mA
Zener Impedance (Zzt) 7 Ω max at Izt
Reverse Leakage (Ir) 10 µA at Vr = 1V
Forward Voltage (Vf) 1.2 V max at If = 200 mA
Surge Current (Izsm) 890 mA
Temperature Coefficient -0.01% to +0.04%/°C
Temperatura de funcionamiento -65°C to +175°C (Tj)
Paquete DO-41 (DO-204AL), Axial

Características

  • Industry-standard 1N4728A-1N4758A series
  • 5.1V nominal zener voltage with ±5% tolerance
  • 1W power dissipation rating
  • Low zener impedance: 7 Ω max
  • Through-hole DO-41 axial package
  • Wide operating temperature: -65°C to +175°C
  • AEC-Q101 qualified (Vishay version)

Aplicaciones

  • Voltage regulation and reference
  • Overvoltage protection circuits
  • Power supply clamping
  • Signal conditioning
  • General-purpose voltage stabilization

The 1N4733ATR is a 5.1V 1W silicon zener diode from the industry-standard 1N4728A through 1N4758A series. It provides stable voltage reference and regulation with ±5% tolerance, 7 Ω maximum zener impedance at 49 mA test current, and 10 µA maximum reverse leakage. The DO-41 axial lead through-hole package enables easy assembly with power dissipation up to 1W at lead temperatures below 50°C. The device is suitable for voltage regulation, overvoltage protection, and general-purpose voltage stabilization in power supply and signal conditioning circuits.

The 1N4733ATR operates in reverse breakdown mode, where the PN junction is designed to conduct current in the reverse direction when the voltage exceeds the zener breakdown voltage (5.1V nominal). In the breakdown region, the voltage across the diode remains relatively constant despite changes in current, making it suitable for voltage regulation. The zener impedance (7 Ω max) characterizes the slope of the V-I curve in the breakdown region — lower impedance means better regulation. The temperature coefficient of approximately +0.02%/°C near 5.1V means the breakdown voltage increases slightly with temperature. Power dissipation is limited to 1W at lead temperatures below 50°C, derating at 6.67 mW/°C above that. The surge current rating of 890 mA accommodates transient overloads.

Pin Nombre Tipo Descripción
Ánodo Ánodo Passive P-type region (unmarked end)
Cátodo Cátodo Passive N-type region (band-marked end)
  • Voltage Regulation: 5.1V reference for bias networks and low-power regulator circuits with ±5% tolerance
  • Overvoltage Protection: Clamping transient voltages to 5.1V to protect downstream circuitry
  • Power Supply Referencing: Stable reference voltage for comparator and error amplifier circuits
  • Signal Clipping: Limiting signal amplitudes to ±5.1V in audio and instrumentation circuits
  • Automotive Protection: AEC-Q101 qualified version available for in-vehicle ECU input protection
Modelo Fabricante Diferencia clave
1N4733A onsemi Same spec, bulk/bag packaging
BZX55C5V1 Nexperia 500mW, DO-35, 5.1V
BZX85C5V1 Nexperia 1.3W, DO-41, 5.1V
1N5338B onsemi 5W, 5.1V, larger package
MMSZ5231B onsemi 500mW, SOD-123, 5.1V SMD
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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