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1N4148TA

100V 200mA switching diode, 4ns trr, DO-35 glass T/H

157411

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Pieza del fabricante：

1N4148TA

Paquete：

DO-35 (DO-204AH), 4.56 x 1.91 mm, glass

Marca：
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Descripción

Productos

The 1N4148TA from onsemi is the through-hole ammo-pack version of the industry-standard 1N4148 small signal switching diode in a DO-35 (DO-204AH) glass package. With 100V reverse voltage, 200mA average rectified current, 500mW power dissipation, and 4ns reverse recovery, it remains one of the most widely used general-purpose switching diodes worldwide.

Especificaciones

Reverse Voltage (VRRM) 100V
Average Rectified Current 200 mA
DC Forward Current 300 mA
Forward Voltage 1.0V max @ 10mA (1N4148)
Reverse Leakage 25 nA @ VR=20V; 5.0 uA @ VR=75V
Breakdown Voltage 100V min @ IR=100uA
Reverse Recovery Time 4 ns
Junction Capacitance 4.0 pF @ VR=0, 1MHz
Non-repetitive Peak Surge 1A @ 8.3ms; 4A @ 1us
Power Dissipation 500 mW
Thermal Resistance 300 C/W (junction-to-ambient)
Temperatura de funcionamiento -55 to +175 C (junction)
Paquete DO-35 (DO-204AH), glass, 4.56 x 1.91mm
Status Activo
RoHS Compliant with Exemption

Características

  • Industry-standard 1N4148 switching diode
  • Through-hole DO-35 glass package
  • Fast switching: 4ns reverse recovery
  • High reliability glass hermetic seal
  • Wide operating temperature: -55 to +175C

Aplicaciones

  • General purpose switching
  • Signal processing circuits
  • Logic gate clamping
  • Protection diodes

The 1N4148TA from onsemi is the ammo-pack (TA suffix) variant of the ubiquitous 1N4148 small signal switching diode in a DO-35 (DO-204AH) glass axial-leaded through-hole package. The 1N4148 family is part of onsemi’s 1N91x/1N4x48 series that also includes the 1N914, 1N4448, and FDLL4148 variants. The TA suffix specifically denotes ammo-pack (fan-fold) packaging for automated insertion, as opposed to TR (tape and reel) or bulk. The DO-35 glass package provides hermetic sealing for high reliability in harsh environments, with an operating junction temperature range of -55 to +175C, wider than most SMD alternatives. Key specifications include 100V repetitive peak reverse voltage, 200mA average rectified current, 4ns reverse recovery time, and 500mW power dissipation with 300 C/W thermal resistance.

The 1N4148TA operates identically to other 1N4148 variants: (1) Forward Conduction: When forward biased above approximately 0.6V, the PN junction conducts with low impedance. The forward voltage is specified at 1.0V maximum at 10mA for the standard 1N4148 grade. (2) Reverse Blocking: The diode blocks current up to 100V peak reverse voltage with only 25nA leakage at 20V and 25C. Breakdown occurs above 100V at 100uA. (3) Fast Switching: The 4ns reverse recovery time enables use at high frequencies. Minority carrier storage in the junction causes the brief recovery period when switching from forward to reverse bias. (4) Capacitance: The 4pF junction capacitance at zero bias (higher than the SMD 1N4148WT’s 2pF due to larger junction area) decreases with reverse bias voltage.

Pin Nombre Tipo Descripción
1 Ánodo Entrada Positive terminal (no band end)
2 Cátodo Entrada Negative terminal (black band end)
  • General purpose switching in through-hole PCB designs requiring 100V blocking and 200mA conduction
  • High-reliability signal clamping in industrial environments using hermetic glass DO-35 package
  • Power supply snubber circuits with 4ns recovery and 500mW dissipation rating
  • Educational and prototyping applications using widely available standard diode
Modelo Fabricante Paquete VR Notas
1N4148TR onsemi DO-35 100V Tape and reel version
1N4448 onsemi DO-35 100V Lower VF (0.72V @ 5mA)
1N914B onsemi DO-35 100V Lower VF grade
FDLL4148 onsemi SOD-80 100V SMD MiniMELF version
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