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CSD18534Q5A

60V N-ch NexFET MOSFET, 7.8mOhm, 17nC Qg, 50A, SON 5x6mm

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Manufacturer Part：

CSD18534Q5A

Package：

VSONP-8 / SON 5mm x 6mm (5.75 x 4.90 x 1.05 mm, exposed pad)

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Description

Product Overview

The CSD18534Q5A from Texas Instruments is a 60V N-channel NexFET power MOSFET in a SON 5mm x 6mm package. With 7.8mOhm RDS(on) at VGS=10V and 17nC gate charge, it is optimized for high-efficiency DC-DC converters, secondary-side synchronous rectification, and motor drive applications.

Key Specifications

VDS 60V
RDS(on) @ VGS=4.5V 9.9mOhm typ, 12.4mOhm max
RDS(on) @ VGS=10V 7.8mOhm typ, 9.8mOhm max
ID (package limit) 50A
ID (silicon, TC=25 C) 69A
Gate Charge (Qg) @ 10V 17nC typ
Qgd 3.5nC typical
VGS(th) 1.5-2.3V (1.9V typical)
Avalanche Energy 80mJ
Operating Temperature -55 to 150 C
Package SON 5x6mm (VSONP-8)

Features

  • Ultra-low Qg (17nC) and Qgd (3.5nC)
  • Very low RDS(on): 7.8mOhm at 10V
  • Low thermal resistance: RthJC = 2.0 C/W
  • Avalanche rated: 80mJ
  • Logic-level gate threshold
  • Pb-free, RoHS, halogen-free
  • MSL-1 unlimited

Applications

  • DC-DC converters (buck, boost, buck-boost)
  • Secondary-side synchronous rectifiers
  • Isolated converter primary-side switch
  • Motor drive and load switches
  • Battery management systems

The CSD18534Q5A from TI is a 60V N-channel NexFET power MOSFET in a SON 5x6mm package with exposed thermal pad. Optimized for high-efficiency power conversion with 7.8mOhm RDS(on) at 10V and 17nC gate charge. The low RthJC (2.0 C/W) enables 50A package current rating. 80mJ avalanche capability and logic-level gate threshold.

Uses TI NexFET trench technology for very low specific on-resistance and gate charge simultaneously. The SON 5×6 package with large exposed drain pad provides 2.0 C/W junction-to-case thermal resistance. Low Qgd/Qgs ratio (3.5/3.2 = 1.09) provides good Miller plateau immunity. The trench structure minimizes JFET region resistance for low RDS(on) per area.

Pin Name Type Function
1 Source Source Source terminal
2 Gate Input Gate control
3 Source Source Source terminal
4-8 Drain Drain Drain terminals (exposed pad)
  • Synchronous buck converter low-side FET in server POL
  • Secondary-side synchronous rectifier in isolated converters
  • Motor drive half-bridge with 60V bus
  • Battery BMS discharge switch
Manufacturer Part Number Package Notes
TI CSD18533Q5A SON 5×6 60V, 3.5mOhm, higher current
Infineon IRLR8726TRPBF D2PAK-7 60V, 9.7mOhm
Vishay SI4190DY-T1-GE3 PowerPAK SO-8 60V, 14.5mOhm
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Contact Information

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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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