CSD17577Q5A


30V N-ch NexFET MOSFET, 4.2mΩ Rds(on), 60A Id, 13nC Qg, SON 5x6mm, sync buck optimized, logic-level gate

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Manufacturer Part:

CSD17577Q5A

Package:

SON 5mm x 6mm (VSONP/DQJ, 8-pin, 0.95mm pitch)

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Description

Product Overview

The CSD17577Q5A is a 30V N-channel NexFET power MOSFET from Texas Instruments, optimized for synchronous buck converter applications in networking, telecommunications, and computing systems. With an ultra-low RDS(on) of 3.5mΩ typical (4.2mΩ max at VGS=10V) and low gate charge of 13nC, it provides an excellent figure of merit (FOM = RDS(on) × Qg ≈ 55mΩ·nC) for high-efficiency power conversion. The SON 5mm × 6mm package ensures low thermal resistance (RθJC = 2.8°C/W max) for high-current applications up to 60A.

Key Specifications

Manufacturer Texas Instruments
FET Type N-Channel NexFET
VDS (Drain-Source Voltage) 30V
VGS (Gate-Source Voltage) ±20V
RDS(on) @ VGS=10V 3.5mΩ typical / 4.2mΩ max
RDS(on) @ VGS=4.5V 5.8mΩ max
ID (Package Limited) 60A @ TC=25°C
ID (Silicon Limited) 83A @ TC=25°C
Qg (Total Gate Charge) @ VGS=10V 13nC typical
Qgd (Gate-Drain Charge) 2.8nC typical
Qgs (Gate-Source Charge) 5.1nC typical
VGS(th) (Gate Threshold) 1.4V typical / 1.8V max @ ID=250µA
Ciss (Input Capacitance) 2310pF max @ VDS=15V
Coss (Output Capacitance) 270pF typical
Crss (Reverse Transfer Capacitance) 102pF typical
RθJA (Junction-to-Ambient) 40°C/W (1″² FR4, 2oz Cu)
RθJC (Junction-to-Case) 2.8°C/W max
Power Dissipation 3W (TA) / 53W (TC)
Operating Temperature -55°C to +150°C (TJ)
Logic Level Gate Yes
Avalanche Rated Yes
Lead-Free / Halogen-Free Yes / Yes
Package SON 5mm × 6mm (VSONP, DQJ, 8-pin)
Budgetary Price $0.17 @ 1ku

Features

  • Ultra-low RDS(on): 3.5mΩ typical at VGS=10V
  • Low gate charge: 13nC typical for high-frequency switching
  • Excellent FOM (RDS(on) × Qg) for high-efficiency converter design
  • Low thermal resistance: RθJC = 2.8°C/W max
  • Avalanche rated for robustness in unclamped inductive switching
  • SON 5mm × 6mm package with low parasitic inductance
  • Optimized for both control FET and synchronous FET positions
  • Logic-level gate drive compatible (RDS(on) specified at 4.5V)
  • Lead-free, RoHS compliant, halogen-free
  • MSL Level-1-260C-UNLIM

Applications

  • Synchronous buck converters in networking and telecom equipment
  • Point-of-load (POL) DC-DC converters for servers and computing
  • Motor drive and battery management systems
  • Load switches and OR-ing applications
  • Power tools and industrial equipment

The CSD17577Q5A is a 30V N-channel NexFET power MOSFET from Texas Instruments, designed for high-efficiency synchronous buck converter applications in networking, telecom, and computing systems. Built on TI’s NexFET technology platform, it achieves an ultra-low RDS(on) of 3.5mΩ typical (4.2mΩ max at VGS=10V) with a total gate charge of only 13nC, resulting in an excellent figure of merit (FOM = RDS(on) × Qg ≈ 55mΩ·nC). The SON 5mm × 6mm package provides low thermal resistance (RθJC = 2.8°C/W max) and low parasitic inductance for high-frequency operation. The device is rated for 60A package-limited continuous drain current at 25°C case temperature and is avalanche-rated for robustness in unclamped inductive switching events. Optimized for both control FET and synchronous FET positions in synchronous buck converters.

NexFET Technology

The CSD17577Q5A is built on TI’s NexFET technology, which uses a vertical copper-strap MOSFET architecture. Unlike conventional planar MOSFETs where the gate and source metallization overlap, NexFET uses a copper strap to connect the source to the package, significantly reducing package inductance and improving thermal performance. This enables the ultra-low RDS(on) per silicon area and low gate charge that characterize NexFET devices.

Synchronous Buck Operation

In a synchronous buck converter, the CSD17577Q5A can serve as either the high-side (control) or low-side (synchronous) MOSFET. As a control FET, its low Qgd (2.8nC) ensures fast switching transitions with minimal switching loss. As a synchronous FET, its ultra-low RDS(on) minimizes conduction loss during the on-time period. The low FOM (RDS(on) × Qg) makes it suitable for both roles in moderate-frequency converters operating at 300kHz to 1MHz.

Gate Drive Requirements

The device is specified for RDS(on) at both VGS=10V (4.2mΩ) and VGS=4.5V (5.8mΩ), enabling logic-level gate drive from 5V controllers. For minimum conduction loss, 10V gate drive is recommended. The typical VGS(th) of 1.4V ensures robust turn-off margin when the gate is driven to 0V, preventing false turn-on due to dV/dt coupling through the Miller capacitance.

Thermal Management

The SON 5mm × 6mm package features an exposed drain pad that solders directly to the PCB, providing RθJC = 2.8°C/W. With RθJA = 40°C/W on a 1-inch² 2oz copper pad, the device can dissipate significant power. For high-current applications, proper thermal via arrays under the drain pad are essential to spread heat into inner PCB layers and copper planes.

Pin Name Type Function
1 Source Power Source terminal
2 Source Power Source terminal
3 Source Power Source terminal
4 Gate Input Gate control terminal (voltage-driven input)
5 Drain Power Drain terminal (connected via exposed pad)
6 Drain Power Drain terminal (connected via exposed pad)
7 Drain Power Drain terminal (connected via exposed pad)
8 Drain Power Drain terminal (connected via exposed pad)
Pad Drain Output Exposed thermal pad — drain connection, solder to PCB copper pour for heat dissipation
  • Synchronous buck converters in networking and telecom equipment where ultra-low RDS(on) and low Qg minimize total power loss at 300kHz–1MHz switching frequencies
  • Point-of-load DC-DC converters for servers and computing systems requiring 60A current handling in compact SON 5x6mm footprint
  • Motor drive H-bridge circuits where avalanche rating provides robustness against inductive flyback during PWM switching
  • Battery management system load switches where 4.2mΩ RDS(on) minimizes voltage drop and conduction loss in the power path
  • OR-ing and hot-swap applications where low RDS(on) reduces forward voltage drop and power dissipation in redundant power paths
Manufacturer Part Number Package VDS RDS(on) Notes
TI CSD17577Q3A SON 3.3×3.3 30V 4.2mΩ Same die, smaller package, lower current rating
TI CSD17579Q5A SON 5×6 30V 9.7mΩ Lower Qg (5.4nC), higher RDS(on), optimized for control FET
TI CSD17573Q5B SON 5×6 30V 2.4mΩ Ultra-low RDS(on) variant, higher Qg, sync FET optimized
Infineon BSZ050N03LS SuperSO-8 30V 5.0mΩ OptiMOS, similar performance class
Vishay SiRA12DP PowerPAK SO-8 30V 4.5mΩ TrenchFET, comparable specifications
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Certification
We have obtained a number of professional certifications and built our own professional testing laboratory.This ensures that every product we deliver to our customers meets the highest quality requirements.We conduct tests in strict accordance with procedures to ensure stable product quality and accurate parameters.To guarantee genuine original parts, we also cooperate with reliable third-party testing institutions for strict quality inspection.We always attach great importance to quality and fully comply with industry standards, relevant regulations, and ISO 9001:2015 requirements.

Shipping & Payment

All electronic components we source from our partnered supply chains go through strict incoming inspections.Through careful testing, we ensure everything delivered to customers is genuine original parts and meets quality requirements.In addition, we keep complete inspection records to make the entire supply chain process clear and traceable.

Certification
We have obtained a number of professional certifications and built our own professional testing laboratory.This ensures that every product we deliver to our customers meets the highest quality requirements.We conduct tests in strict accordance with procedures to ensure stable product quality and accurate parameters.To guarantee genuine original parts, we also cooperate with reliable third-party testing institutions for strict quality inspection.We always attach great importance to quality and fully comply with industry standards, relevant regulations, and ISO 9001:2015 requirements.

Service & Packaging

All electronic components we source from our partnered supply chains go through strict incoming inspections.Through careful testing, we ensure everything delivered to customers is genuine original parts and meets quality requirements.In addition, we keep complete inspection records to make the entire supply chain process clear and traceable.

Certification
We have obtained a number of professional certifications and built our own professional testing laboratory.This ensures that every product we deliver to our customers meets the highest quality requirements.We conduct tests in strict accordance with procedures to ensure stable product quality and accurate parameters.To guarantee genuine original parts, we also cooperate with reliable third-party testing institutions for strict quality inspection.We always attach great importance to quality and fully comply with industry standards, relevant regulations, and ISO 9001:2015 requirements.