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BAS16VY

Triple switching diode, 100V, 4ns trr, SOT363

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Manufacturer Part：

BAS16VY

Package：

SOT363 (SC-88) (2.1 x 1.25 x 0.95 mm)

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Description

Product Overview

The BAS16VY is a Nexperia (formerly NXP) high-speed triple isolated switching diode in SOT363 (SC-88) package. Features 100V reverse voltage, 4ns reverse recovery, 200mA per diode, and 1.5pF capacitance. Three independent diodes in one compact package.

Key Specifications

Configuration Triple isolated
VR 100 V
IF 200 mA per diode
VF 1.0 V max @ 50mA
trr 4 ns max
Cd 1.5 pF max
Package SOT363 (SC-88)

Features

  • Three electrically isolated diodes
  • 4ns fast reverse recovery
  • 1.5pF low capacitance
  • 100V reverse voltage rating
  • SOT363 ultra-small footprint
  • 500nA low leakage @ 80V

Applications

  • High-speed signal switching
  • Logic level gating
  • Reverse polarity protection
  • Small-signal rectification

The BAS16VY is a Nexperia high-speed triple isolated switching diode in a compact SOT363 (SC-88) surface-mount package. The device integrates three independent switching diodes with electrical isolation between each, providing three diodes in the footprint of a single component. Each diode features 100V reverse voltage, 200mA forward current, 4ns maximum reverse recovery time, and 1.5pF maximum capacitance, making it suitable for high-speed digital and analog switching applications. The 1.0V maximum forward voltage at 50mA provides adequate signal headroom in 3.3V and 5V logic systems. The 500nA maximum leakage current at 80V reverse voltage ensures minimal signal degradation in high-impedance circuits. The SOT363 package (2.1 x 1.25mm) provides significant board space savings compared to three individual SOD-323 or SOT-23 diode packages. The VY suffix denotes the SOT363/SC-88 package variant with YP marking code.

Each of the three BAS16VY diodes is a standard silicon PN junction diode optimized for fast switching. During forward bias, current flows from anode to cathode with a typical forward voltage of 0.7-1.0V. During reverse bias, the diode blocks current up to 100V with only nA-level leakage. The 4ns reverse recovery time is the time required for the stored minority carriers to be swept out of the junction when switching from forward to reverse bias, making the device suitable for high-frequency switching. The low 1.5pF junction capacitance minimizes signal distortion and loading in high-frequency circuits. The triple isolated configuration means the three diodes share no electrical connection, allowing each to be used independently in different circuit nodes.

Pin Function Description
1 Anode 1 Diode 1 anode
2 Cathode 1 Diode 1 cathode
3 Anode 2 Diode 2 anode
4 Cathode 2 Diode 2 cathode
5 Anode 3 Diode 3 anode
6 Cathode 3 Diode 3 cathode
  • Three-line RS-485 bus reverse polarity protection using triple isolated diodes in single package
  • I2C and SPI signal gating with 4ns switching for bus multiplexing
  • Logic level OR-ing with triple diodes for power source selection in battery-backed systems
  • High-speed digital signal steering with low 1.5pF capacitance preserving edge rates
Model Manufacturer Key Difference
BAS16V Nexperia SOT-23 single diode
BAS16W Nexperia SOD-323 single diode
BAS70-04 Nexperia 70V Schottky, similar package
BAV99 Nexperia Dual series pair, SOT-23
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