نظرة عامة على المنتج
The TISP61089BDR-S from Bourns is a dual forward-conducting P-gate thyristor overvoltage protector designed for SLIC (Subscriber Line Interface Circuit) protection. It features 170V off-state voltage, -112V breakover voltage, 30A peak pulse current, and low gate triggering current below 5mA, in an 8-pin SOIC surface-mount package.
المواصفات الرئيسية
| الشركة المصنعة | Bourns |
| النوع | Dual P-Gate Thyristor Protector |
| Off-State Voltage (VDRM) | 170V |
| Breakover Voltage (Max) | -112V |
| Peak Pulse Current (10/1000us) | 30A |
| Surge Current Rating (2/10us) | 120A |
| Holding Current | 150mA min |
| Gate Trigger Current | <5mA |
| Off-State Current | 5uA max |
| Capacitance | 100pF |
| الحزمة | 8-SOIC (5.0 x 4.0mm) |
| درجة حرارة التشغيل | -40C to +85C |
الميزات
- Dual forward-conducting buffered P-gate thyristor
- Programmable overvoltage protection for negative rail SLICs
- Voltage tracking with SLIC battery voltage
- Low gate triggering current: <5mA
- High holding current: >150mA
- Rated for GR-1089-CORE and K.44 impulses
- 2/10us overshoot voltage specified
- Feed-thru pinout for simplified PCB layout
التطبيقات
- SLIC overvoltage protection in telecom line cards
- VoIP gateway surge protection
- PBX and central office equipment
- Telecommunications infrastructure