الصفحة الرئيسية > الدوائر المتكاملة الدوائر المتكاملة > الدوائر المتكاملة الخطية التناظرية > MMBT3906LT1G

MMBT3906LT1G

PNP GP Transistor, -40V -200mA, SOT-23, 2N3906 SMD Equivalent

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جزء الشركة المصنعة ： جزء الشركة المصنعة

MMBT3906LT1G

الحزمة ： الحزمة

SOT-23-3 (2.9 x 1.3 x 1.0 mm)

الوصف

نظرة عامة على المنتج

The MMBT3906LT1G from onsemi is a 40V, 200mA PNP general-purpose transistor in a SOT-23 surface mount package, the SMD equivalent of the 2N3906.

المواصفات الرئيسية

النوع	PNP General-Purpose Transistor
VCEO	-40 V
آي سي	-200 mA (continuous)
hFE (min)	100 @ IC=-10mA
VCE(sat)	-0.25 V (max) @ IC=-10mA
fT	250 MHz (typical)
تبديد الطاقة	225 mW
الحزمة	SOT-23-3
درجة حرارة التشغيل	-55C to +150C (TJ)

الميزات

PNP complement to MMBT3904 (NPN)
SMD equivalent of through-hole 2N3906
40V, 200mA rating for general-purpose use
250 MHz transition frequency
SOT-23 compact surface mount package
AEC-Q101 qualified

التطبيقات

General-purpose switching and amplification
Signal inversion and level shifting
LED driving and load switching
Complementary push-pull with MMBT3904

مقدمة المنتج:MMBT3906LT1G مقدمة المنتج

The MMBT3906LT1G from onsemi is a PNP general-purpose bipolar junction transistor in a SOT-23-3 surface mount package. It is the SMD equivalent of the industry-standard through-hole 2N3906 and the PNP complement to the MMBT3904 NPN transistor. The 40V VCEO and 200mA IC ratings cover a wide range of low-power switching and amplification applications. The 250 MHz transition frequency supports RF and high-frequency signal processing. The 100 minimum hFE at 10mA collector current provides adequate gain for most small-signal circuits. The T1G suffix indicates tape and reel packaging with onsemi’s lead-free (Pb-free) finish. AEC-Q101 qualified versions are available for automotive applications. The device is one of the most widely used and cost-effective PNP transistors in the electronics industry.

مبدأ العمل:MMBT3906LT1G مبدأ العمل

The MMBT3906LT1G is a planar epitaxial PNP bipolar junction transistor. In a PNP transistor, current flows from the emitter (P-type) through the base (N-type) to the collector (P-type) when the base-emitter junction is forward-biased (VBE negative relative to emitter). Holes are the majority carriers in the emitter, injected into the thin base region where a small fraction recombine with electrons (base current), while the majority diffuse across the base to the collector. The collector current is proportional to the base current with the DC current gain hFE typically 100-300. The 250 MHz transition frequency (fT) is the frequency at which the common-emitter current gain drops to unity, determining the useful bandwidth for amplifier applications. The SOT-23 package provides a junction-to-ambient thermal resistance of approximately 556 K/W, limiting continuous power dissipation to 225 mW at 25C ambient temperature.

وصف الدبوس:MMBT3906LT1G تعريف الدبوس ووظائفه

دبوس	الاسم	النوع	الوظيفة
1	القاعدة	المدخلات	Base terminal
2	الباعث	الإدخال/الإخراج	Emitter terminal
3	جامع التحصيل	الإدخال/الإخراج	Collector terminal

Application Scenarios:In which products and applications isMMBT3906LT1G مستعمل

PNP low-side switch for 12V relay coil driven from 3.3V MCU GPIO
Complementary push-pull audio output with MMBT3904 NPN
Signal inverter for logic level conversion from NPN to PNP domain
Constant current source with emitter resistor for LED biasing

Alternative Models:What chips are recommended as replacements for MMBT3906LT1G

الشركة المصنعة	رقم الجزء	الحزمة	الملاحظات
نيكسبيريا	MMBT3906,215	SOT-23	Pin-compatible equivalent
شركة ديودز	MMBT3906-7-F	SOT-23	Pin-compatible equivalent
أونسمي	MMBT3904LT1G	SOT-23	NPN complement
نيكسبيريا	BC857B,235	SOT-23	Similar PNP, different pinout
إنفينيون	BC857BWE6433	SOT-23	Similar PNP, different pinout