نظرة عامة على المنتج
The IRF530NPBF from Infineon Technologies is an N-channel HEXFET power MOSFET rated at 100V VDS, 17A ID, with 90mohm RDS(on) in a TO-220AB through-hole package. Designed for switching applications requiring high voltage and moderate current.
المواصفات الرئيسية
| نوع القناة | N-Channel |
| VDS (Drain-Source) | 100 V |
| المعرف (تيار التصريف المستمر) | 17 A |
| RDS(on) Max | 90 mohm @ VGS=10V |
| تبديد الطاقة | 70 W |
| Gate Charge (Qg) | 37 nC typical |
| Turn-On Delay | 9.2 ns typical |
| Turn-Off Delay | 35 ns typical |
| Transconductance (gFS) | 12 S typical |
| VGS(th) | 2-4 V |
| الحزمة | TO-220AB |
| درجة حرارة التشغيل | -55 to +175 C (TJ) |
الميزات
- 100V rating suitable for 48V automotive and industrial systems
- 90mohm RDS(on) for low conduction losses
- Dynamic dv/dt rated for rugged switching
- Fast switching with 9.2ns turn-on delay
- TO-220AB through-hole package for easy prototyping and heat sinking
التطبيقات
- DC-DC converter power stage
- Motor drive and inverter switching element
- Solenoid and relay driver
- Battery charger switching transistor
- Load switch for industrial power distribution