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IRF530NPBF

N-ch MOSFET, 100V, 17A, 90mohm, TO-220AB

8901

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Pieza del fabricante：

IRF530NPBF

Paquete：

TO-220AB (10.4 x 4.6 x 15.8 mm)

Descripción

Productos

The IRF530NPBF from Infineon Technologies is an N-channel HEXFET power MOSFET rated at 100V VDS, 17A ID, with 90mohm RDS(on) in a TO-220AB through-hole package. Designed for switching applications requiring high voltage and moderate current.

Especificaciones

Channel Type	N-Channel
VDS (Drain-Source)	100 V
ID (Continuous Drain Current)	17 A
RDS(on) Max	90 mohm @ VGS=10V
Power Dissipation	70 W
Gate Charge (Qg)	37 nC typical
Turn-On Delay	9.2 ns typical
Turn-Off Delay	35 ns typical
Transconductance (gFS)	12 S typical
VGS(th)	2-4 V
Paquete	TO-220AB
Temperatura de funcionamiento	-55 to +175 C (TJ)

Características

100V rating suitable for 48V automotive and industrial systems
90mohm RDS(on) for low conduction losses
Dynamic dv/dt rated for rugged switching
Fast switching with 9.2ns turn-on delay
TO-220AB through-hole package for easy prototyping and heat sinking

Aplicaciones

DC-DC converter power stage
Motor drive and inverter switching element
Solenoid and relay driver
Battery charger switching transistor
Load switch for industrial power distribution

Introducción del producto:IRF530NPBF Presentación del producto

The IRF530NPBF from Infineon Technologies is a 100V N-channel HEXFET power MOSFET in a TO-220AB through-hole package. The device features 90mohm maximum on-resistance at 10V gate drive, 17A continuous drain current rating, and 70W power dissipation capability. With 37nC typical gate charge and 9.2ns turn-on delay time, the IRF530NPBF is well-suited for medium-frequency switching applications. The dynamic dv/dt rating ensures rugged performance in inductive switching environments. The PBF suffix indicates lead-free (Pb-free) plating.

Principio de funcionamiento:IRF530NPBF Principio de funcionamiento

The IRF530NPBF operates as a voltage-controlled N-channel enhancement-mode power MOSFET. (1) When VGS exceeds the threshold voltage (2-4V), an inversion layer forms in the P-body region beneath the gate oxide, creating an N-type channel connecting source to drain. Current flows from drain to source, with the on-resistance determined by the channel resistance plus the drift region resistance. At VGS=10V, RDS(on) is typically 70mohm. (2) During switching, the gate charge must be supplied or removed through the gate driver. The 37nC total gate charge determines the switching speed: lower gate resistance in the driver circuit produces faster switching but higher dv/dt stress. (3) The HEXFET cell geometry uses a hexagonal layout of millions of parallel MOSFET cells on a single die, minimizing on-resistance per unit area. The epitaxial drift layer is optimized for 100V breakdown, providing the voltage blocking capability when the MOSFET is off.

Descripción de la clavija:IRF530NPBF Definición y funciones de las clavijas

Pin	Nombre	Función
1	Puerta	Gate input (voltage controlled)
2	Drenaje	Drain (connected to tab)
3	Fuente	Source and substrate
Pestaña	Drenaje	Drain tab for heat sinking

Application Scenarios:In which products and applications isIRF530NPBF usado

DC-DC converter power stage: half-bridge or synchronous buck converter switching element
Motor drive and inverter switching element for 48V and 80V motor systems
Solenoid and relay driver with free-wheeling diode for inductive loads
Battery charger switching transistor in offline and DC-DC topologies
Load switch for industrial power distribution and hot-swap applications

Alternative Models:What chips are recommended as replacements for IRF530NPBF

Modelo	Fabricante	Diferencia clave
IRF540NPBF	Infineon	100V, 28A, 44mohm, higher current
IRFZ44NPBF	Infineon	55V, 47A, lower voltage
FDP8441	onsemi	40V, 80A, much lower RDS(on)
IRFB4110PBF	Infineon	100V, 180A, 3.7mohm, high performance
STP75NF75	ST	75V, 75A, 13mohm