نظرة عامة على المنتج
The BSC070N10NS3GATMA1 from Infineon Technologies is an OptiMOS 3 N-channel power MOSFET rated at 100V with 7mΩ on-resistance and 90A continuous drain current. Designed for synchronous rectification and DC-DC converter applications, it combines low RDS(on) with excellent switching performance in a SuperSO8 (PG-TDSON-8) package.
المواصفات الرئيسية
| VDS | 100 V |
| RDS(on) max | 7 mΩ @ VGS=10V |
| Continuous ID | 90 A (Tc=25°C) |
| Gate Threshold Voltage | 3.5 V |
| تبديد الطاقة | 114 W (Tc=25°C) |
| Gate Charge | 65 nC (typical) |
| الحزمة | SuperSO8 (PG-TDSON-8) |
| Technology | OptiMOS 3 N-channel |
| درجة حرارة التشغيل | -55°C to +175°C (Tj) |
الميزات
- Ultra-low RDS(on) of 7mΩ for minimal conduction losses
- 100V breakdown voltage for telecom and industrial power systems
- High continuous current rating of 90A for demanding loads
- Low gate charge of 65nC enables high-frequency switching
- SuperSO8 package with exposed cooling pad for superior thermal performance
التطبيقات
- Synchronous rectification in telecom and server power supplies
- Primary and secondary side MOSFET in DC-DC converters
- Motor drive and inverter applications
- Battery management and protection circuits
- Solar inverter and energy storage systems