FDMC3612

The FDMC3612 from onsemi (Fairchild) is a 60V N-channel MOSFET in a compact PQFN 3x3mm (Power33) package. Featuring 16mOhm maximum RDS(on) at 10V VGS and 26A continuous drain current, it is designed for high-efficiency switching applications. The low gate charge of 17nC enables fast switching with minimal driver loss. The exposed drain pad provides excellent thermal dissipation in a small footprint. This MOSFET is optimized for synchronous rectification in DC-DC converters, motor drive, and load switch applications.

The FDMC3612 is an N-channel enhancement mode vertical DMOS MOSFET. When the gate-source voltage exceeds the threshold (typically 2.1V), an inversion layer forms in the P-body region, creating a conductive channel between drain and source. Current flows from drain to source, proportional to VGS above threshold. The trench gate structure minimizes RDS(on) by increasing channel density. The low RDS(on) x Qg figure of merit (272mOhm*nC) enables efficient high-frequency switching. The body diode provides a natural freewheeling path for inductive loads during dead-time in synchronous buck converters.

• DC-DC converter low-side synchronous rectifier MOSFET
• Motor drive H-bridge power stage
• Notebook PC power management switching Battery protection and charge/discharge switching Industrial load switch and hot-swap control