BSC098N10NS5ATMA1

The Infineon BSC098N10NS5ATMA1 is a 100V N-Channel power MOSFET from the OptiMOS 5 family, built on SuperJunction technology. It achieves ultra-low on-resistance of 9.8mOhm maximum at VGS=10V, making it ideal for high-efficiency synchronous rectification and DC-DC converter applications. The low total gate charge of 52nC enables high-frequency switching with minimal driving losses. The excellent Figure of Merit (RDS(on) x Qg = 430mOhm*nC) positions this device as a market leader in the 100V class. The SuperSO-8 package provides low parasitic inductance and good thermal performance with a top-side cooling option. The device is 100% avalanche tested and rated for repetitive avalanche conditions.

The BSC098N10NS5ATMA1 operates as a voltage-controlled N-Channel MOSFET using SuperJunction technology: 1) SuperJunction Structure: Unlike conventional planar MOSFETs, the SuperJunction architecture uses alternating P and N columns in the drift region. This allows the drift region to be heavily doped for lower on-resistance while maintaining high breakdown voltage through charge balance between columns. 2) Conduction: At VGS=10V, the channel is fully enhanced, and the RDS(on) of 8.3mOhm typical provides very low conduction loss. At 31A, conduction loss is only 8W typical. 3) Switching: The low gate charge (52nC) enables rapid switching transitions. The gate driver must charge and discharge the input capacitance (Ciss), and the low Qgd (Miller charge) minimizes the switching plateau. 4) Avalanche: The device can safely absorb inductive energy during unclamped switching, with the junction temperature rising briefly but staying within safe limits.

• Synchronous rectification in 48V telecom DC-DC converters
• Secondary-side MOSFET in server power supply LLC stages
• Motor drive half-bridge in battery-powered tools