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AON7410

30V N-ch MOSFET, 24A, 20mOhm@10V, 9.8nC Qg, DFN 3x3 EP, DC-DC/load switch

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Manufacturer Part：

AON7410

Package：

DFN 3x3A-8L EP (3.0 x 3.0 x 0.78 mm, 0.65mm pitch, exposed pad)

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Description

The AON7410 from Alpha & Omega Semiconductor is a 30 V N-channel enhancement-mode power MOSFET in a DFN 3x3A-8L package with exposed pad. It features 20 mOhm maximum RDS(on) at VGS = 10 V, 24 A continuous drain current, 9.8 nC typical gate charge, and 20 W power dissipation. Fabricated with advanced trench technology, the device targets DC-DC converter and load switch applications. 100% UIS and Rg tested. Halogen-free and RoHS compliant. Operating junction temperature range is -55C to +150C. Tape-and-reel packaging with 5000 units per reel.

The AON7410 from Alpha & Omega Semiconductor is a 30 V N-channel enhancement-mode power MOSFET in a thermally enhanced DFN 3x3A-8L package with exposed pad. The device uses advanced trench technology to deliver excellent RDS(on) with low gate charge, making it well-suited for DC-DC converter and load switch applications.

With 20 mOhm maximum RDS(on) at VGS = 10 V (26 mOhm at 4.5 V) and 24 A continuous drain current, the AON7410 provides high current handling in a compact 9 mm2 footprint. The 9.8 nC typical gate charge at 10 V enables efficient switching at frequencies up to several hundred kHz with minimal gate-drive loss.

The DFN 3x3A-8L package features a large exposed thermal pad on the bottom that provides a low-impedance thermal path to the PCB. With RthJA of approximately 50-60C/W on a 1 in2 FR4 board with 2 oz copper, the package can dissipate up to 20 W at case temperatures up to 25C, or 3.1 W in free air at 25C ambient.

The device is 100% UIS (Unclamped Inductive Switching) tested and 100% Rg tested, ensuring reliable avalanche energy handling and consistent gate resistance for predictable switching behavior. The 1.4-2.5 V threshold voltage range provides logic-level drive capability from 2.5 V and above.

The AON7410 is halogen-free, antimony-free, and RoHS compliant. It is qualified for industrial applications with a maximum junction temperature of 150C. Tape-and-reel packaging contains 5000 units per reel for automated SMT assembly.

**N-Channel Trench MOSFET:** The AON7410 uses trench gate technology where vertical trenches are etched into the silicon and the gate electrode is formed inside these trenches. This creates a large channel width per unit die area, achieving the low 20 mOhm RDS(on). Current flows vertically from source (top) through the channel to drain (bottom/exposed pad).

**Enhancement-Mode Operation:** With VGS below the threshold (1.4-2.5 V), no channel forms and the device is off. When VGS exceeds VGS(th), an inversion layer forms under the gate oxide, creating a conductive N-type channel. RDS(on) decreases with increasing VGS as the channel becomes more enhanced.

**DFN 3x3A-8L Pinout:** The 8-pin DFN package dedicates pins 1-3 to source, pin 4 to gate, and pins 5-8 to drain (plus exposed pad = drain). This multi-pin drain/source configuration minimizes package parasitic inductance and resistance. The exposed pad serves as both the primary thermal path and the drain connection.

**Avalanche Rating:** The 100% UIS testing guarantees each device can safely absorb inductive energy during unclamped switching events. The device is rated for 17 A avalanche current and 14 mJ single-pulse avalanche energy.

Pin Name Type Description
1 Source P/G Source terminal; connect to ground for low-side switching; three source pins reduce package resistance and inductance; body diode anode
2 Source P/G Source terminal (parallel with pins 1, 3)
3 Source P/G Source terminal (parallel with pins 1, 2)
4 Gate I Gate input; VGS(th) 1.4-2.5V; VGS max +/-20V; 9.8nC gate charge@10V; Rg 3 Ohm typical; drive from MCU GPIO or gate driver
5 Drain O Drain terminal; 30V max VDS; 24A continuous; connect to load or inductor; primary thermal path
6 Drain O Drain terminal (parallel with pins 5, 7, 8, exposed pad); solder to copper pour
7 Drain O Drain terminal (parallel with pins 5, 6, 8)
8 Drain O Drain terminal (parallel with pins 5, 6, 7)
Pad Drain/Thermal O Exposed pad; must solder to PCB copper pour with thermal vias; primary thermal path; RthJC = 5-6C/W; connects to drain
Application Description
DC-DC Buck Converter Low-Side Low-side synchronous rectifier in 5V/12V/19V input buck converter; 20mOhm@10V minimizes conduction loss; 9.8nC Qg allows 200-500kHz switching; pair with complementary P-ch or bootstrap N-ch high-side
High-Current Load Switch Low-side load switch for battery-powered systems; MCU GPIO at 2.5V+ drives gate through resistor; 24A capacity handles multiple loads; 26mOhm@4.5V gives <280mV drop at 10A
Battery Protection Circuit Overcurrent protection switch in Li-ion battery packs; 30V rating covers multi-cell configurations; fast turn-off (24ns delay) disconnects load quickly during fault; avalanche rated for inductive kick
Model Manufacturer Compatibility Key Difference
AON7414 Alpha & Omega Series Variant 30V N-ch; same DFN 3×3; different RDS(on)/ID combination; use when specific trade-off needed
SI7860DN-T1-GE3 Vishay Functional Equivalent 30V N-ch; 26A; 16mOhm@10V; PowerPAK SO-8; lower RDS(on); different package; Vishay-sourced
IRF8721TRPBF Infineon Competitive Alternative 30V N-ch; 20A; 19mOhm@10V; SO-8; similar specs; Infineon-sourced; higher Qg (21nC)
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