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ADR444BRZ-REEL7

4.096V XFET voltage reference, 3ppm/C, 1.8uV p-p noise, +/-0.04%, SOIC-8

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Manufacturer Part：

ADR444BRZ-REEL7

Package：

SOIC-8 (4.9 x 3.9 x 1.45 mm)

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Description

Product Overview

The ADR444BRZ-REEL7 from Analog Devices is an ultra-low noise, 4.096V LDO XFET voltage reference with 3ppm/C temperature coefficient and +/-0.04% initial accuracy. It features source and sink current capability in an 8-pin SOIC package.

Key Specifications

Output Voltage 4.096V
Initial Accuracy +/-1.6mV (+/-0.04%)
Temperature Coefficient 3ppm/C (B Grade)
Input Voltage Range 4.6V to 18V
Output Noise (0.1-10Hz) 1.8uV p-p
Source Current +10mA
Sink Current -5mA
Operating Temperature -40 to 125 C

Features

  • Ultralow noise: 1.8uV p-p (0.1Hz to 10Hz)
  • Excellent temperature coefficient: 3ppm/C
  • Low dropout operation: 500mV headroom
  • High source and sink current: +10mA/-5mA
  • Output voltage trim capability (0.5% range)
  • Long-term stability: 30ppm/1000 hours typical

Applications

  • Precision data acquisition systems
  • High-resolution ADC/DAC reference
  • Battery-powered instrumentation
  • Medical instruments
  • Optical control circuits

The ADR444BRZ-REEL7 from Analog Devices is a high-precision, ultralow noise XFET voltage reference providing a fixed 4.096V output. Using Analog Devices patented temperature drift curvature correction and XFET (eXtra implanted junction FET) technology, the device achieves an outstanding temperature coefficient of 3ppm/C (B grade) with ultralow noise of 1.8uV p-p from 0.1Hz to 10Hz. The initial accuracy of +/-0.04% (+/-1.6mV) makes it suitable for precision measurement systems. The XFET architecture operates with only 500mV of supply headroom, significantly lower than buried Zener references, and provides better noise performance. The device can source up to 10mA and sink up to 5mA, eliminating the need for external buffer amplifiers in many applications. A trim terminal allows 0.5% output voltage adjustment without degrading performance. The ADR444BRZ is available in an 8-pin narrow SOIC package rated for -40 to 125 C operation.

The ADR444BRZ-REEL7 uses the XFET (eXtra implanted junction FET) voltage reference architecture. Key subsystems include: (1) XFET Reference Core – two junction FETs with different implant doses operate at the same drain current; the difference in their gate-source voltages produces a stable reference voltage that is inherently low-noise; (2) Curvature Correction – Analog Devices patented temperature drift curvature correction circuit compensates for residual nonlinearity, achieving 3ppm/C stability; (3) Output Buffer – a low-noise precision amplifier provides high output current capability (10mA source, 5mA sink) with low output impedance; (4) Trim Network – allows external resistor adjustment of the output voltage by +/-0.5% without affecting stability; (5) LDO Regulator – the device operates with only 500mV of headroom enabled by the low-voltage XFET architecture.

Pin Name Type Function
1 TP1 Test Test point (do not connect)
2 VIN Power Input supply voltage (4.6V to 18V)
3 NC Unused No connect
4 GND Ground Ground connection
5 TRIM Input Output voltage trim adjustment
6 VOUT Output Reference voltage output (4.096V)
7 NC Unused No connect
8 TP2 Test Test point (do not connect)
  • Precision data acquisition and measurement system voltage references
  • High-resolution ADC and DAC reference inputs
  • Battery-powered precision instrumentation
  • Medical device calibration and measurement circuits
  • Industrial process control and optical systems
Manufacturer Part Number Package Notes
Analog Devices ADR444ARZ-REEL7 SOIC-8 A grade, 10ppm/C
Texas Instruments REF5040IDR SOIC-8 4.096V, 3ppm/C
Maxim Integrated MAX6341ESA+ SOIC-8 4.096V, 1ppm/C
Microchip MCP1541T-I/SN SOT-23-3 4.096V, 50ppm/C
Linear Tech LT1461DCS8-4.096 SOIC-8 4.096V, 3ppm/C
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Email: info@materialparts.com

Tel / WhatsApp: +86 13760382860

Service & Packaging

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Contact Information

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Tel / WhatsApp: +86 13760382860
Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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