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2N2222A

NPN general-purpose BJT, 40V/600mA, hFE 100-300, 300MHz fT, TO-18/TO-92

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Manufacturer Part：

2N2222A

Package：

TO-18 (metal can, 5.3mm dia) / TO-92 (plastic, 4.5 x 4.1mm)

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Description

Product Overview

The 2N2222A from onsemi is a general-purpose NPN silicon switching transistor in a TO-18 metal can package, rated for 40V VCEO, 600mA IC, and 625mW power dissipation. One of the most widely used transistors since the 1960s.

Key Specifications

Type NPN Silicon Bipolar Junction Transistor
VCEO (Collector-Emitter) 40V
VCBO (Collector-Base) 75V
VEBO (Emitter-Base) 6.0V
IC (Continuous Collector Current) 600mA (onsemi) / 800mA (military)
hFE (DC Current Gain) 100-300 @ IC=150mA, VCE=10V
VCE(sat) 0.3V @ IC=150mA, IB=15mA
VBE(sat) 0.6-1.2V @ IC=150mA
fT (Transition Frequency) 300MHz
Power Dissipation 625mW @ TA=25C (TO-92) / 1W @ TC=25C (TO-18)
Turn-On Time 35ns (typ)
Turn-Off Time 300ns (typ)
Package TO-18 (metal can) / TO-92 (plastic)
Operating Temperature -65 to +150 C (TJ)

Features

  • Industry-standard general-purpose NPN transistor
  • High current gain (hFE 100-300 at 150mA)
  • Low saturation voltage (0.3V at 150mA)
  • Fast switching speed (35ns on, 300ns off)
  • MIL-PRF-19500/255 qualified (JAN/JANTX/JANTXV versions)
  • Available in TO-18 metal can and TO-92 plastic packages
  • Wide operating temperature range (-65 to +150 C)

Applications

  • General-purpose switching and amplification
  • LED and relay drivers
  • Logic-level signal interfacing
  • Small motor drivers
  • Audio preamplifiers

The 2N2222A from onsemi is one of the most widely recognized and used general-purpose NPN bipolar junction transistors in the electronics industry. Originally introduced in the 1960s, it remains a go-to device for medium-current switching and amplification applications. The transistor features a collector-emitter voltage rating of 40V and continuous collector current of 600mA (TO-92 plastic) or 800mA (TO-18 metal can military versions), making it suitable for driving small loads such as LEDs, relays, small motors, and other transistors. The DC current gain (hFE) of 100-300 at IC=150mA provides adequate sensitivity for direct drive from 5V logic gates or microcontroller pins through a base resistor. The low collector-emitter saturation voltage of 0.3V at 150mA minimizes power loss when used as a switch. A transition frequency of 300MHz makes the device usable for RF and video applications up to VHF frequencies. Switching times of 35ns turn-on and 300ns turn-off (saturated) are adequate for most low-frequency switching applications including relay drivers and LED dimming. Military-qualified versions (JAN2N2222A, JANTX2N2222A, JANTXV2N2222A) are available in the hermetically sealed TO-18 metal can package for high-reliability applications. The commercial TO-92 plastic version offers the same electrical performance at lower cost. The 2N2222A is complemented by the PNP 2N2907A for push-pull and H-bridge configurations.

The 2N2222A operates as a current-controlled NPN bipolar junction transistor. Key operating principles include: (1) Forward Active Mode – when the base-emitter junction is forward-biased (VBE > 0.6V) and the base-collector junction is reverse-biased, emitter electrons are injected into the base region; most of these electrons cross the thin base and are collected by the reverse-biased collector; the collector current (IC) is proportional to the base current (IB) through the DC current gain (hFE = IC/IB, typically 100-300 at 150mA); (2) Saturation Mode – when both junctions are forward-biased, the transistor is fully ON with minimum VCE(sat) of 0.3V at 150mA; in this mode, increasing IB beyond the saturation point (IB > IC/hFE) does not significantly increase IC; this is the switch-ON state; (3) Cutoff Mode – when the base-emitter junction is not forward-biased (VBE < 0.5V), only small leakage currents flow (ICBO 6mA is needed; a 5V logic output through a 680-ohm base resistor provides approximately 6.5mA base drive; (5) Frequency Response – the transition frequency (fT) of 300MHz is the frequency at which the common-emitter current gain drops to unity; practical amplifier bandwidth is limited to fT/hFE or about 1-3MHz for typical gain settings.

Pin Name TO-18 Position TO-92 Position Function
E Emitter Pin 1 Pin 1 (left) Emitter terminal (N-type emitter region)
B Base Pin 2 Pin 2 (center) Base terminal (P-type base region)
C Collector Pin 3 (case) Pin 3 (right) Collector terminal (N-type collector, case on TO-18)
  • LED driver: 5V MCU GPIO through 680-ohm base resistor drives up to 150mA LED string with VCE(sat)=0.3V
  • Relay driver: switches 12V/100mA relay coil through base resistor from logic gate
  • Logic level shifter: 3.3V logic drives 5V load through common-emitter switch with pull-up resistor
  • Small motor H-bridge: 2N2222A + 2N2907A complementary pair for bidirectional motor drive
  • Audio preamp: common-emitter amplifier with voltage gain of 50-200 for microphone or sensor signals
Manufacturer Part Number Package Notes
onsemi P2N2222A TO-92 Different pinout (EBC vs CBE)
onsemi 2N2907A TO-18/TO-92 PNP complementary pair
ST 2N2222A TO-92 ST version, compatible
Diodes Inc MMBT2222A SOT-23-3 SMD equivalent, 600mA/40V
Nexperia BC547B TO-92 Lower current (100mA) general-purpose NPN
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Contact Information

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Tel / WhatsApp: +86 13760382860

Service & Packaging

Materialparts is a professional electronic component supplier based in Shenzhen, China, with over 20 years of global trading experience. We integrate component procurement, quality inspection, technical support, customized packaging, and global delivery services to provide one-stop supply chain solutions. Our business covers industrial control, automotive electronics, consumer electronics, medical devices and other industries. We always adhere to genuine sources, stable supply and considerate after-sales service.

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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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