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TXB0108RGYR

8-bit bidirectional level translator, auto-dir, 1.2-5.5V, VQFN-20

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Manufacturer Part：

TXB0108RGYR

Package：

20-Pin VQFN (4.5 x 3.5 x 0.8 mm)

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Description

Product Overview

The TXB0108RGYR is a Texas Instruments 8-bit bidirectional voltage-level translator with auto-direction sensing, 1.2V-3.6V A-port, 1.65V-5.5V B-port, +/-15kV ESD, 4ns propagation delay, and 4uA max supply current. Packaged in VQFN-20 (4.5×3.5mm), -40C to +85C.

Key Specifications

Bits 8
A Port (VCCA) 1.2 V to 3.6 V
B Port (VCCB) 1.65 V to 5.5 V
Data Rate 100 Mbps max
Propagation Delay 4 ns typ
Supply Current 4 uA max
ESD (B Port) +/-15 kV HBM
Package VQFN-20 (4.5 x 3.5 mm)

Features

  • 8-bit bidirectional voltage translation
  • Auto-direction sensing (no direction control needed)
  • A port: 1.2V to 3.6V; B port: 1.65V to 5.5V
  • +/-15kV HBM ESD on B port
  • VCC isolation (outputs Hi-Z if either supply is GND)
  • Ioff support for partial-power-down
  • 4uA max supply current
  • OE input referenced to VCCA

Applications

  • GPIO, SPI, UART, I2S level shifting
  • Smartphone and tablet interface bridging
  • JTAG and PCM signal translation
  • Processor-to-peripheral voltage bridging

The TXB0108RGYR is a Texas Instruments 8-bit bidirectional voltage-level translator in a 20-pin VQFN package with auto-direction sensing. The device uses two separate configurable power-supply rails: the A port tracks VCCA (1.2V to 3.6V) and the B port tracks VCCB (1.65V to 5.5V), with VCCA not exceeding VCCB. This enables universal low-voltage bidirectional translation between any combination of 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, and 5V voltage nodes without requiring a direction control signal. The auto-direction sensing circuit detects which port is being driven and enables the opposite port output accordingly, making the device ideal for bidirectional buses like SPI, I2C, and UART. The +/-15kV HBM ESD protection on the B port provides robustness for connectors and cables. The VCC isolation feature places all outputs in high-impedance when either supply is at GND, and the Ioff circuitry prevents damaging backflow current during partial-power-down.

The TXB0108RGYR uses an auto-direction sensing architecture based on edge-rate accelerators and one-shot circuits. Each I/O cell monitors its pin voltage. When a driving device pulls a pin on one port, the edge-rate accelerator detects the transition and briefly turns on the opposite port output driver to assist the transition, after which the one-shot times out and the output returns to a high-impedance state. The external pull-up or pull-down resistors then maintain the steady-state logic level. The A-port I/O cells are referenced to VCCA and the B-port I/O cells to VCCB, with internal level-shifting between the two voltage domains. The OE pin (active high, referenced to VCCA) enables all outputs when high, and places all outputs in high-impedance when low.

Pin Mnemonic Description
1 A1 I/O 1 (A port)
2 VCCA A-port supply (1.2-3.6V)
3-9 A2-A8 I/O 2-8 (A port)
10 OE Output enable (active high)
11 GND Ground
12-18 B8-B2 I/O 8-2 (B port)
19 VCCB B-port supply (1.65-5.5V)
20 B1 I/O 1 (B port)
  • 1.8V MCU SPI bus to 3.3V peripheral level shifting with auto-direction for MISO line
  • 2.5V FPGA to 5V legacy peripheral GPIO expansion with +/-15kV ESD on connector side
  • 1.2V processor to 3.3V JTAG debug interface with VCC isolation for hot-plug
  • Smartphone AP to modem UART bridging at 4uA IQ for battery life
Model Manufacturer Key Difference
TXB0108PWR TI TSSOP-20, wider package
TXB0108DQS TI SON-20, smaller 2x4mm
SN74LVC8T245PWR TI Direction-controlled, 8-bit
74LVC4245APW Nexperia Direction-controlled, 8-bit
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