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TPCA8128L1Q(CM

N-ch MOSFET, 60V, 30A, 12mOhm, SMD, DC-DC converter and load switch

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Manufacturer Part：

TPCA8128L1Q(CM

Package：

SOP Advance (5.3 x 6.2 x 1.0 mm)

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Description

Product Overview

The TPCA8128L1Q(CM from Toshiba is an N-channel power MOSFET with a VDSS of 60V, ID of 30A, and low on-resistance in a compact surface-mount package. Designed for load switching and DC-DC converter applications.

Key Specifications

Polarity N-Channel
VDSS 60 V
ID 30 A
RDS(on) max 12 mOhm @ VGS=10V
Qg typ 30 nC
Operating Temperature -40C to +150C

Features

  • Low 12mOhm on-resistance for high-efficiency switching
  • 30A continuous drain current
  • Low gate charge of 30nC for fast switching

Applications

  • DC-DC converter power stage
  • Load switching and battery management
  • Motor drive H-bridge

The TPCA8128L1Q(CM from Toshiba is an N-channel power MOSFET rated at 60V VDSS and 30A ID with 12mOhm maximum on-resistance at VGS=10V in a compact SOP Advance surface-mount package. The low on-resistance and 30nC typical gate charge make it suitable for high-efficiency DC-DC converters and load switching applications. The device is designed for synchronous rectification, motor drive, and power management circuits.

The TPCA8128L1Q(CM uses trench-gate MOSFET technology for low on-resistance. (1) Trench Gate: Vertical trench structures in the silicon create narrow gate electrodes that provide maximum channel density, resulting in low RDS(on) per die area. (2) Switching: The 30nC gate charge allows fast switching transitions, reducing switching losses in high-frequency DC-DC converters. (3) Body Diode: The intrinsic body diode provides a freewheeling path in synchronous rectification and motor drive applications.

Pin Name Type Function
1 Source Power Source terminal
2 Gate Input Gate control
3 Drain Output Drain terminal (heatsink tab)
  • DC-DC converter synchronous rectification with 12mOhm RDS(on)
  • Load switching and battery management with 30A current rating
  • Motor drive H-bridge low-side switch with fast switching
Manufacturer Part Number Package Notes
Infineon BSZ060N06LS SuperSO8 60V, 6mOhm, lower RDS
onsemi FDD86102 DPAK 60V, 22mOhm
Vishay SiR436DP PowerPAK SO-8 60V, 6.8mOhm
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Contact Information

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Service & Packaging

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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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