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TLP152(TPLE(T


IGBT gate drive photocoupler, +/-2.5A peak, 3750Vrms isolation, 20kV/us CMTI, SO6 T/R

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Manufacturer Part:

TLP152(TPLE(T

Package:

5-pin SO6 (3.7 x 7.0 x 2.1 mm, 2.54mm pitch, gull-wing, SMD)

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Description

The TLP152 from Toshiba Electronic Devices and Storage is a 1-channel IGBT/MOSFET gate drive photocoupler in a 5-pin SO6 package (3.7 x 7.0 x 2.1 mm). It features a GaAlAs infrared LED optically coupled to a high-gain, high-speed photo-IC with totem-pole output. Key specs: +/-2.5A peak output current, 10-30V supply, 3750 Vrms isolation voltage, +/-20 kV/us common-mode transient immunity, 170/190 ns propagation delay, and safety standard approvals (UL1577, VDE EN60747-5-5, CQC). The TPLE suffix denotes tape-and-reel packaging. Operating temperature -40C to +100C.

The TLP152 from Toshiba Electronic Devices and Storage is a 1-channel gate drive photocoupler in a 5-pin SO6 surface-mount package. The TLP152(TPL,E(T ordering variant specifies tape-and-reel packaging. The device consists of a GaAlAs infrared LED optically coupled to an integrated high-gain, high-speed photodetector IC with totem-pole output.

The totem-pole output configuration provides both sourcing and sinking capability with +/-2.5A peak output current, suitable for directly driving small to medium IGBTs or power MOSFETs without an external amplifier. This is a significant advantage over open-collector photocouplers that require external pull-up resistors and provide only sinking capability.

The device provides 3750 Vrms minimum isolation voltage (60 seconds, RH <= 60%), meeting the safety requirements of IEC 60747-5-5 and EN 62368-1. Safety standard approvals include UL1577, cUL (CSA), VDE (EN 60747-5-5), and CQC (GB 4943.1), making it suitable for applications requiring reinforced insulation. The internal shield in the photodetector IC provides a high common-mode transient immunity (CMTI) of +/-20 kV/us minimum, ensuring reliable operation in noisy switching environments such as motor drive inverters where high dv/dt transients are common. The propagation delay time is 170 ns maximum (L-to-H) and 190 ns maximum (H-to-L), with pulse width distortion of 50 ns maximum. These timing characteristics are adequate for switching frequencies up to 50-100 kHz in typical motor drive applications. The threshold input current (IFLH) is 7.5 mA maximum, meaning the LED must be driven with at least 7.5 mA to guarantee output switching. Typical LED forward voltage is 1.4V minimum to 1.8V maximum at 10 mA. The supply current (ICC) is only 3.0 mA maximum at VCC = 30V, making the device suitable for bootstrap-powered high-side drive circuits where supply current is limited. The recommended supply voltage range is 10V to 30V, covering the 15V typically used for IGBT gate drive and 12V for MOSFET gate drive. A 0.1 uF bypass capacitor must be connected between VCC (pin 6) and GND (pin 4). The TLP152 is widely used in industrial inverters, plasma display panels (PDPs), and photovoltaic inverters. It is also suitable for induction cooktop applications.

**Optical Isolation:** The GaAlAs infrared LED on the input side emits light when forward current (IF) flows through it. The photodetector IC on the output side receives this light through the optically transparent isolation barrier. The electrical connection between input and output is broken; only light passes through, providing galvanic isolation rated at 3750 Vrms.

**Photodetector IC with Totem-Pole Output:** The photodetector IC consists of a photodiode, amplifier, and totem-pole output stage. When the LED is ON, the photodiode generates a current that is amplified and drives the upper transistor (M1) of the totem-pole output ON and the lower transistor (M2) OFF, pulling VO HIGH. When the LED is OFF, M1 turns OFF and M2 turns ON, pulling VO LOW. This push-pull action provides both sourcing (+2.5A peak) and sinking (-2.5A peak) capability.

**Internal Shield for CMTI:** The internal shield layer between the LED and photodetector blocks capacitive coupling between the input and output sides. Without this shield, high dv/dt transients on the output side (switching node) would couple displacement current into the photodetector through parasitic capacitance, potentially causing false switching. The shield diverts this displacement current to ground, achieving +/-20 kV/us CMTI.

**Truth Table:** LED ON -> M1 ON, M2 OFF -> VO = HIGH. LED OFF -> M1 OFF, M2 ON -> VO = LOW. This means the output follows the LED state with non-inverting logic. A gate driver IC or MCU drives the LED through a current-limiting resistor.

Pin Name Type Description
1 Anode I LED anode; connect through current-limiting resistor to gate driver output; forward voltage 1.4-1.8V@10mA; drive with 10-20mA for reliable switching; max 20mA continuous, 40mA peak
3 Cathode I LED cathode; connect to gate driver ground or logic LOW; reverse voltage max 5V; do not reverse bias beyond rating
4 GND G Output side ground; connect to IGBT emitter or MOSFET source; reference for VO output; connect bypass capacitor to VCC
5 VO O Totem-pole output; +/-2.5A peak; connects to IGBT/MOSFET gate through gate resistor; HIGH when LED ON; LOW when LED OFF; swings between GND and VCC
6 VCC P Output side supply; 10-30V recommended; 35V absolute max; powers output stage and photodetector IC; 3mA max ICC; decouple with 0.1uF ceramic to GND near pin; typically 15V for IGBT, 12V for MOSFET
Application Description
Industrial Inverter IGBT Gate Drive Drive IGBT modules in 3-phase motor inverters; 3750Vrms isolation meets safety requirements; +/-20kV/us CMTI handles switching transients; totem-pole output provides +/-2.5A for fast IGBT turn-on/off; pair 3 or 6 devices for 3-phase bridge
Photovoltaic Inverter Drive MOSFETs/IGBTs in solar micro-inverters; high isolation voltage for safety; low 3mA ICC suitable for bootstrap power supply; VDE approval for European market
Switch-Mode Power Supply Isolated gate drive for primary-side MOSFET; totem-pole output provides clean drive signal without external pull-up; 170/190ns delay adequate for 100kHz+ switching; UL recognition for ITE power supplies
Model Manufacturer Compatibility Key Difference
TLP250H Toshiba Higher Drive Current +/-2.5A peak same as TLP152; DIP-8 package (through-hole); wider body for higher creepage; use when through-hole mounting preferred or higher creepage needed
HCPL-3120 Broadcom Competitive Alternative +/-2.5A peak; DIP-8/SO-8; similar isolation and CMTI; Broadcom-sourced; different package footprint
ACPL-332J Broadcom Feature Upgrade +/-2.5A peak with integrated DESAT IGBT fault detection and FAULT output; SO-16; provides overcurrent protection; use when IGBT desaturation protection needed
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