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STTH1002CB-TR

200 V dual ultrafast diode, common cathode, 16 A, 20 ns trr, TO-252 (DPAK)

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Manufacturer Part：

STTH1002CB-TR

Package：

TO-252 (DPAK) (6.5 x 5.5 x 2.3 mm)

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Description

Product Overview

The STTH1002CB-TR is a STMicroelectronics high-efficiency ultrafast dual diode with common cathode configuration. It offers a repetitive peak reverse voltage of 200 V and average forward current of up to 2 x 8 A. The device features very low forward losses and a reverse recovery time of 20 ns (typical), making it ideal for high-frequency switching applications. It is packaged in a TO-252 (DPAK) package and operates at junction temperatures up to 175°C.

Key Specifications

VRRM 200 V
IF(AV) per device 16 A (Tc = 125°C)
IF(AV) per diode 8 A (Tc = 135°C)
VF (typ) 0.78 V (IF = 5A, Tj = 150°C)
trr (typ) 20 ns
IFSM 50 A (tp = 10 ms)
Tj (max) 175°C
Configuration Dual Common Cathode

Features

  • Very low forward losses
  • Low recovery time (20 ns typical)
  • High surge current capability (50 A)
  • High junction temperature (175°C max)
  • Dual common cathode configuration
  • TO-252 (DPAK) surface mount package

Applications

  • Low voltage, high frequency inverters
  • Free-wheeling diode in switching converters
  • Polarity protection
  • Switch-mode power supplies
  • DC-DC converters secondary rectification

The STTH1002CB-TR is a STMicroelectronics high-efficiency ultrafast dual diode in a common cathode configuration. With a 200 V repetitive peak reverse voltage and 16 A average forward current per device, it features very low forward voltage drop (0.78 V typical at 5A, 150°C) and fast reverse recovery (20 ns typical). The 175°C maximum junction temperature enables operation in demanding thermal environments. Packaged in a space-saving TO-252 (DPAK) surface mount package, it is designed for low voltage, high frequency inverter and free-wheeling applications.

The STTH1002CB-TR operates as a dual ultrafast rectifier diode with common cathode configuration. Each diode independently conducts forward current when the anode voltage exceeds the cathode voltage by the forward voltage drop (VF). During reverse recovery, the stored minority carriers are swept out rapidly, achieving a typical recovery time of 20 ns, which minimizes switching losses in high-frequency applications. The common cathode configuration allows both diodes to share the cathode connection, simplifying PCB layout in full-wave rectification or freewheeling circuits. The ultrafast recovery characteristic is achieved through optimized doping profiles and platinum or gold diffusion lifetime control.

Pin Mnemonic Description
1 A1 Anode of diode 1
2 A2 Anode of diode 2
3 K1/K2 Common cathode (tab)
  • Freewheeling diode in buck/boost converter output stages
  • Secondary side rectification in isolated DC-DC converters
  • High-frequency inverter snubber and clamp circuits
  • Polarity protection in automotive and industrial power supplies
  • OR-ing diode in redundant power supply configurations
Model Manufacturer Key Difference
STTH102CB-TR ST Single diode version
MURB1620CT onsemi Similar dual ultrafast, 16A/200V
FUF1620CD Vishay Similar dual ultrafast diode
STTH2002CB-TR ST Higher current version
MBRF20100CT onsemi Higher voltage (100V) alternative
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