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STPS10150CG-TR

Dual Schottky 150V 10A, common cathode, 0.69V VF, D2PAK

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Manufacturer Part：

STPS10150CG-TR

Package：

D2PAK / TO-263-3 (10.16 × 8.80 × 4.40 mm)

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Description

Product Overview

The STPS10150CG-TR from STMicroelectronics is a dual center-tap high-voltage Schottky rectifier rated at 150 V, 10 A (5 A per diode) in a D2PAK package. Designed for high-frequency switched-mode power supplies, it offers low forward voltage drop (0.69 V typ at 125°C), low leakage current, and 175°C maximum junction temperature capability.

Key Specifications

  • Configuration: 1 Pair Common Cathode (dual center-tap)
  • VRRM: 150 V
  • IF(AV): 5 A per diode, 10 A per device
  • VF: 0.69 V typ / 0.75 V max @ 5 A, 125°C
  • IR: 0.4 mA typ / 2.0 mA max @ 150 V, 125°C
  • IFSM: 120 A (10 ms sinusoidal)
  • PARM: 220 W (10 µs, Tj = 125°C)
  • Tj(max): 175°C
  • Rth(j-c): 4°C/W per diode, 2.4°C/W total
  • Package: D2PAK (TO-263-3)

Features

  • High junction temperature capability (175°C)
  • Good trade-off between leakage and VF
  • Low leakage current
  • Avalanche capability specified
  • ECOPACK2 compliant

Applications

  • High-frequency SMPS output rectification
  • DC-DC converter secondary side
  • Reverse polarity protection
  • Freewheeling diode in motor drives

The STPS10150CG-TR from STMicroelectronics is a dual center-tap Schottky rectifier optimized for high-frequency switched-mode power supply output stages. The common-cathode configuration provides 5 A per diode (10 A total) at 150 V reverse voltage rating, with a typical forward voltage drop of only 0.69 V at 5 A and 125°C junction temperature. The device achieves an excellent trade-off between forward voltage drop and reverse leakage current (0.4 mA typ at 150 V, 125°C). The 175°C maximum junction temperature rating provides significant thermal margin for demanding applications. Avalanche capability is specified for robustness during transient events. The D2PAK package offers low thermal resistance (2.4°C/W total junction-to-case) for efficient heat dissipation in surface-mount designs.

The STPS10150CG-TR uses Schottky barrier technology where a metal-semiconductor junction (rather than a p-n junction) provides rectification. The Schottky barrier eliminates minority carrier storage, resulting in near-zero reverse recovery time and minimal switching losses at high frequencies. The two diodes are connected in a common-cathode center-tap configuration, ideal for full-wave rectification with a center-tapped transformer secondary. During the positive half-cycle, one diode conducts while the other blocks; the roles reverse during the negative half-cycle. The low VF (0.69 V typ at 125°C) reduces conduction losses compared to silicon p-n diodes. The specified avalanche rating ensures the device can absorb energy from voltage spikes without damage.

Pin Name Description
1 Anode 1 Anode of Diode 1
2 Anode 2 Anode of Diode 2
3 Cathode Common Cathode (tab)
Tab Cathode Common Cathode (heatsink tab)
  • SMPS Output Rectification: Full-wave center-tap rectification in 48V/60V output stages with 0.69 V VF minimizing conduction losses
  • DC-DC Converter Secondary: High-frequency (100 kHz+) output rectification where fast recovery and low VF are critical
  • OR-ing Diodes: Redundant power supply bus isolation with 150 V rating and low forward drop
  • Freewheeling Diodes: Inductive load clamping in motor drives and solenoid drivers
  • Reverse Polarity Protection: High-current reverse connection protection in automotive and industrial systems
Model Brand VRRM (V) IF (A) VF (V)
STPS20150CG-TR ST 150 20 0.74
STPS10H100CG ST 100 10 0.62
MBR20150CT onsemi 150 20 0.75
VS-10MQ100N Vishay 100 10 0.55
CSD10120D TI 120 10 0.47
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