Product Overview
The STL105DN4LF7AG is an STMicroelectronics AEC-Q101 qualified dual N-channel 40V STripFET™ F7 Power MOSFET in a PowerFLAT 5×6 double island package with wettable flanks. Featuring 3.5mΩ typical RDS(on) at 10V and 40A continuous drain current per die, it delivers among the lowest on-resistance in its class for automotive motor drive and switching applications.
Key Specifications
| Configuration | Dual N-Channel (double island) |
| Drain-Source Voltage (VDSS) | 40V |
| On-Resistance (RDS(on)) Typ | 3.5mΩ @ VGS=10V, ID=12A |
| On-Resistance (RDS(on)) Max | 4.5mΩ @ 10V; 8mΩ @ 4.5V |
| Continuous Drain Current (ID) | 40A per die (TC=25°C, limited by package) |
| Gate Charge (Qg) Typ | 27.5nC @ VGS=10V, ID=24A |
| Input Capacitance (Ciss) | 1594pF @ VDS=25V |
| Gate Threshold Voltage (VGS(th)) | 1.5V to 2.5V |
| Power Dissipation | 94W (TC=25°C) |
| Operating Temperature | -55°C to +175°C |
| Qualification | AEC-Q101 |
| Package | PowerFLAT 5×6 double island, wettable flank |
Features
- AEC-Q101 qualified for automotive applications
- Among the lowest RDS(on) on the market
- Excellent Figure of Merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
- Wettable flank package for AOI inspection
- STripFET™ F7 technology
- 100% avalanche tested
Applications
- Automotive DC motor drives
- Switching power supplies
- Load switch and reverse polarity protection
- Automotive body and chassis electronics
- Battery management systems