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STD5N60M2

N-ch 600V 3.5A MOSFET, 1.4Ω, 8.5nC Qg, MDmesh M2, DPAK

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Manufacturer Part：

STD5N60M2

Package：

DPAK (TO-252-3) (6.60 × 6.10 × 2.20 mm)

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Description

Product Overview

The STD5N60M2 from STMicroelectronics is an N-channel 600 V, 3.5 A MDmesh M2 Power MOSFET in a DPAK package. Developed using ST’s MDmesh M2 technology with strip layout, it offers low on-resistance (1.3 Ω typ, 1.4 Ω max) and optimized switching characteristics, making it suitable for high-efficiency switching converters.

Key Specifications

  • VDS: 600 V
  • ID: 3.5 A (TC = 25°C)
  • RDS(on): 1.3 Ω typ, 1.4 Ω max @ VGS = 10 V
  • VGS(th): 2-4 V
  • Qg: 8.5 nC typ @ 480 V, 3.5 A
  • CISS: 211 pF, COSS: 13 pF, CRSS: 0.75 pF
  • Switching: td(on) 12 ns, tr 3 ns, td(off) 70 ns, tf 15 ns
  • Source-Drain Diode: VSD = 1.6 V, trr = 220 ns
  • PTOT: 45 W (TC = 25°C)
  • Avalanche: 80 mJ single pulse
  • Operating Temperature: -55°C to +150°C
  • Package: DPAK (TO-252-3)

Features

  • Extremely low gate charge for high-frequency operation
  • 100% avalanche tested
  • Zener-protected gate
  • MDmesh M2 strip layout technology
  • ECOPACK2 compliant

Applications

  • Switch-mode power supplies
  • Power factor correction (PFC)
  • Motor drives
  • DC-DC converters
  • Lighting ballasts

The STD5N60M2 is an N-channel Power MOSFET from STMicroelectronics built on the MDmesh M2 technology platform. This strip-layout process combines a vertical structure with advanced charge balance techniques to deliver low on-resistance (1.3 Ω typ) and extremely low gate charge (8.5 nC) in a 600 V rated device. The optimized COSS profile and low CRSS (0.75 pF) minimize switching losses, making the device suitable for hard-switched and resonant topologies up to several hundred kilohertz. The 100% avalanche testing and Zener-protected gate enhance reliability in demanding applications. The DPAK package provides a compact footprint with excellent thermal performance (Rth(j-c) = 2.08°C/W) for the 45 W dissipation rating. The device is ECOPACK2 compliant for environmentally conscious designs.

The STD5N60M2 operates as a voltage-controlled switch. When VGS exceeds the threshold (2-4 V), an inversion channel forms in the p-body region connecting source to drain, allowing current flow. The MDmesh M2 process uses a multiple-resistive poly-silicon strip layout that distributes the gate charge evenly across the active area, reducing RDS(on) while maintaining low Qg. The vertical current flow through the drift region supports the 600 V breakdown rating. During switching transitions, the low CISS (211 pF) and CRSS (0.75 pF) minimize drive requirements and Miller plateau effects. The integrated Zener diode between gate and source clamps voltage transients to protect the thin gate oxide. The body diode (VSD = 1.6 V, trr = 220 ns) provides a freewheeling path in bridge topologies.

Pin Name Description
1 Gate Gate Input
2 Drain Drain (connected to tab)
3 Source Source
Tab Drain Drain (heatsink tab)
  • SMPS Primary Switch: 600V rating and low Qg (8.5 nC) suit offline flyback/forward converters up to 200 W
  • PFC Boost Stage: Continuous-mode PFC at 60-150 kHz with 1.4 Ω RDS(on) balancing conduction and switching losses
  • Motor Drive Inverters: 3.5 A current rating for small BLDC motor drives with avalanche ruggedness for inductive kicks
  • LED Lighting Ballasts: High-voltage buck converters for LED strings with Zener gate protection
  • DC-DC Converters: Half-bridge and full-bridge topologies leveraging low COSS for ZVS operation
Model Brand VDS (V) Ron (Ω) Qg (nC)
STP5N60M2 ST 600 1.4 8.5
STD7N60M2 ST 600 0.85 14
FQPF8N60C onsemi 600 1.2 22
IRFB8123PBF Infineon 600 1.6 11
TK5A60D Toshiba 600 1.35 10
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