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SSM3J334R,LF(B

P-ch 30V 4A MOSFET, 71mΩ Ron, U-MOS VI, SOT-23F

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Manufacturer Part：

SSM3J334R,LF(B

Package：

SOT-23F (2.9 × 2.4 × 0.8 mm)

Description

Product Overview

The SSM3J334R,LF(B from Toshiba is a P-channel MOSFET built on U-MOS VI technology, rated at -30 V VDSS and -4.0 A ID in a compact SOT-23F package. It features low on-resistance of 71 mΩ max at VGS = -10 V and 105 mΩ max at VGS = -4.5 V, making it ideal for power management switch applications requiring logic-level gate drive.

Key Specifications

Polarity: P-channel
VDSS: -30 V
ID: -4.0 A
RDS(on): 71 mΩ max @ VGS = -10 V / 105 mΩ max @ VGS = -4.5 V / 136 mΩ max @ VGS = -4 V
VGS(th): -0.8 to -2.0 V
Qg: 5.9 nC typ @ -10 V
CISS: 280 pF
VSD (body diode): 1.2 V max @ 4 A
PD: 1.0 W (Ta = 25°C)
Operating Temperature: up to 150°C (Tj)
Package: SOT-23F (2.9 × 2.4 × 0.8 mm)

Features

U-MOS VI generation for low RDS(on)
Logic-level gate drive (4 V / 4.5 V / 10 V)
Extremely compact SOT-23F with flat leads
Low gate charge for fast switching
RoHS compliant

Applications

Power management switches
Battery protection circuits
Load switches in portable devices
DC-DC converter high-side switches
Li-Ion battery disconnect

Product Introduction:SSM3J334R,LF(B Product Introduction

The SSM3J334R from Toshiba is a P-channel power MOSFET built on the U-MOS VI process technology, offering -30 V drain-source voltage and -4 A continuous drain current in a compact SOT-23F package. The device achieves low on-resistance of 71 mΩ maximum at VGS = -10 V and 105 mΩ maximum at VGS = -4.5 V, enabling efficient power switching with logic-level gate drive. The low gate charge of 5.9 nC supports high-frequency switching with minimal drive power. The ultra-thin SOT-23F package (0.8 mm height) is ideal for space-constrained portable devices. Applications include power management switches, battery disconnect circuits, load switches, and high-side DC-DC converter switching elements.

Working Principle:SSM3J334R,LF(B Working Principle

The SSM3J334R operates as a voltage-controlled P-channel MOSFET. When the gate voltage is pulled below the source by more than the threshold voltage (VGS(th) = -0.8 to -2.0 V), an inversion channel forms in the p-body connecting source to drain, allowing current flow from source to drain. The U-MOS VI trench-gate structure provides high cell density, resulting in low RDS(on) per unit area. The flat-lead SOT-23F package provides improved thermal performance compared to standard SOT-23 due to better PCB thermal coupling. The low VGS(th) range enables direct drive from 3.3 V or 5 V logic. The body diode (VSD = 1.2 V max) provides a freewheeling current path in inductive switching applications.

Pin Description:SSM3J334R,LF(B Pin Definition and Functions

Pin	Name	Description
1	Gate	Gate Input
2	Source	Source
3	Drain	Drain

Application Scenarios:In which products and applications isSSM3J334R,LF(B used

Li-Ion Battery Disconnect: High-side P-channel switch for battery protection with -30 V rating covering full charge range
Load Switch in Portables: Logic-level gate drive (4.5 V) enables microcontroller-controlled power rail switching
DC-DC High-Side Switch: 71 mΩ RDS(on) at -10 V gate drive for buck-boost converter input switching
Reverse Polarity Protection: P-channel series pass element with gate tied to ground for automatic polarity blocking
Power Routing: Multiple rail selection in battery/supercap backup systems with low 136 mΩ Ron at 4 V drive