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SPA08N80C3

N-ch CoolMOS, 800V, 8A, 1.2Ohm, 32nC Qg, DPAK, off-line SMPS/PFC

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Manufacturer Part：

SPA08N80C3

Package：

DPAK / TO-252 (6.60 x 6.00 x 2.30 mm)

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Description

Product Overview

The SPA08N80C3 from Infineon is an 800V, 8A N-channel CoolMOS power MOSFET with 1.2 Ohm on-resistance in a TO-252 (DPAK) package. Using superjunction technology, it provides extremely low on-resistance and gate charge for high-efficiency switch-mode power supplies.

Key Specifications

Polarity N-Channel
VDSS 800 V
ID 8 A
RDS(on) max 1.2 Ohm @ VGS=10V
Qg typ 32 nC
Technology Superjunction (CoolMOS)
Operating Temperature -55C to +150C

Features

  • 800V superjunction technology for low RDS(on) and Qg
  • 1.2 Ohm on-resistance for efficient switching
  • 32nC low gate charge reduces driver power
  • DPAK surface-mount package for compact SMPS designs

Applications

  • Off-line SMPS and PFC stages
  • Adapter and charger power supplies
  • Auxiliary power supplies
  • LED driver power stages

The SPA08N80C3 from Infineon is an 800V N-channel CoolMOS superjunction power MOSFET rated at 8A continuous drain current with 1.2 Ohm maximum on-resistance at VGS=10V in a DPAK (TO-252) package. Superjunction technology provides both low RDS(on) and low gate charge (32nC typical), enabling high-efficiency operation in off-line switch-mode power supplies. The device is suitable for PFC boost stages, flyback converters, and other high-voltage switching applications. DPAK surface-mount package allows compact PCB layouts.

The SPA08N80C3 uses Infineon’s superjunction (CoolMOS) technology. (1) Superjunction Structure: Unlike conventional planar MOSFETs where drift region thickness and doping determine both voltage rating and RDS(on), superjunction technology uses alternating p and n columns in the drift region. This allows the drift region to be heavily doped for low RDS(on) while maintaining high breakdown voltage through lateral depletion between the columns. (2) Low Qg: The charge stored in the p-n columns is largely recovered during switching, resulting in much lower gate charge than a conventional MOSFET of equivalent voltage and RDS(on). (3) Avalanche: The device is 100% avalanche tested, providing robustness against voltage spikes from transformer leakage inductance in flyback converters.

Pin Name Type Function
1 Gate Input Gate control
2 Drain Output Drain (tab/heatsink)
3 Source Power Source
  • Off-line SMPS PFC boost stage with 800V blocking
  • Adapter and charger flyback converters with low RDS(on)
  • Auxiliary power supplies with 32nC low gate charge
  • LED driver power stages in DPAK surface-mount
Manufacturer Part Number Package Notes
Infineon IPA60R099CP TO-220 600V, lower RDS, through-hole
ST STW8NM80 TO-247 800V, 8A, MDmesh
onsemi FCD8N60N DPAK 600V, 8A, similar class
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