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SMUN5311DW1T1G

Dual NPN pre-biased digital transistor, 50V, 100mA, R1=R2=10kΩ, SOT-363, AEC-Q101

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Manufacturer Part：

SMUN5311DW1T1G

Package：

SOT-363 (SC-88) (2.0 x 1.25 x 0.9 mm)

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Description

Product Overview

The onsemi SMUN5311DW1T1G is a dual NPN pre-biased digital transistor integrating two independent NPN transistors with built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ) in a single SOT-363 (SC-88) package. AEC-Q101 qualified for automotive applications, it simplifies digital switching circuit design by eliminating external components.

Key Specifications

Configuration Dual NPN
VCEO Max 50 V
IC Max 100 mA
R1 (Input Resistor) 10 kΩ
R2 (Base-Emitter Resistor) 10 kΩ
R1/R2 Ratio 1
hFE Min 80
VCE(sat) Max 0.25 V
Operating Temperature -55 °C to +150 °C
Package SOT-363 (SC-88)

Features

  • Dual NPN pre-biased transistors in one package
  • Built-in R1 = 10 kΩ and R2 = 10 kΩ bias resistors
  • AEC-Q101 qualified for automotive applications
  • Low saturation voltage: 0.25 V max
  • Compact SOT-363 package saves PCB area
  • MSL 1 (unlimited floor life)
  • Pb-free, RoHS compliant

Applications

  • Automotive digital signal switching
  • Logic-level relay and LED driver
  • MCU I/O expansion and buffering
  • Interface circuit between logic families

The onsemi SMUN5311DW1T1G is a dual NPN pre-biased digital transistor that integrates two independent NPN switching transistors with built-in 10 kΩ base resistors in a compact SOT-363 package. The integrated R1 (10 kΩ input resistor) and R2 (10 kΩ base-emitter shunt resistor) eliminate the need for external bias components, reducing BOM count and PCB area. With 10 kΩ input resistance, the device is optimized for direct drive from 3.3 V and 5 V logic outputs, providing appropriate base drive current without overloading the source. AEC-Q101 qualification ensures automotive-grade reliability across the -55 °C to +150 °C operating range. The dual configuration enables two independent switching channels in the footprint of a single SOT-363 package, making it ideal for space-constrained automotive body electronics.

The SMUN5311DW1T1G integrates two independent pre-biased NPN transistor circuits. Each channel consists of an NPN transistor with a series base resistor (R1 = 10 kΩ) and a parallel base-emitter resistor (R2 = 10 kΩ). When a logic-high voltage is applied to the input pin, current flows through R1 into the base, turning on the transistor. The 10 kΩ R1 at 5 V logic provides approximately 430 µA of base current (5V – 0.7V)/10kΩ, which with hFE of 80 supports up to 34 mA of collector current. When the input goes low, R2 provides a discharge path for stored base charge, ensuring fast turn-off. The R1/R2 = 1 ratio provides balanced switching characteristics suitable for general-purpose digital signal interfacing. The two channels are electrically isolated, allowing independent operation or combined use in differential/relay driver circuits.

Pin Name Type Function
1 B1 Input Transistor 1 base input (via R1=10kΩ)
2 E2 Output Transistor 2 emitter
3 C2 Output Transistor 2 collector
4 B2 Input Transistor 2 base input (via R1=10kΩ)
5 E1 Ground Transistor 1 emitter
6 C1 Output Transistor 1 collector
  • Automotive digital signal switching and level translation
  • LED and relay driver channels in body control modules
  • MCU I/O buffering for high-current loads
  • Dual-channel logic interface circuits
Manufacturer Part Number Package Notes
Rohm UMH11N SOT-363 Dual NPN, R1=10kΩ, R2=10kΩ
Nexperia PDTA143XT SOT-363 Dual PNP pre-biased (complement)
onsemi SMUN5313DW1T1G SOT-363 NPN/PNP dual, R1=R2=47kΩ
Diodes Inc DAN202K SOT-363 Dual NPN, R1=10kΩ, R2=10kΩ
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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