Home > Discrete Semiconductor Devices > Insulated Gate Bipolar Transistors (IGBT) > SMBT3904DW1T1G

SMBT3904DW1T1G

Dual NPN BJT, 40V, 200mA, hFE 100-300, 300MHz, SOT-363

4286

Effective Inventory

Go to Inquiry

Image for reference only

Manufacturer Part：

SMBT3904DW1T1G

Package：

SOT-363 / SC-88-6 / SC-70-6 (2.00 × 2.10 × 1.10 mm)

Brand：

Product Categories：

Insulated Gate Bipolar Transistors (IGBT), Integrated Circuits ICs

Other recommendations you may be interested in.

SII9396SCNUC-BAR

IS43TR16256BL-125KBLI

Description

Product Overview

The SMBT3904DW1T1G from onsemi is a dual NPN general-purpose bipolar transistor in a compact SOT-363 (SC-88-6) package. Each transistor features 40 V VCEO, 200 mA collector current, hFE of 100-300, and 300 MHz transition frequency, making it ideal for low-power surface mount applications where board space is at a premium.

Key Specifications

Configuration: Dual NPN (independent)
VCEO: 40 V
VCBO: 60 V
VEBO: 6 V
IC (continuous): 200 mA
VCE(sat): 300 mV max @ 5 mA, 50 mA
hFE: 100-300 @ 10 mA, 1 V
fT: 300 MHz
Power Dissipation: 150 mW total (both devices)
Operating Temperature: -55°C to +150°C
Package: SOT-363 (SC-88-6) (2.00 × 2.10 × 1.10 mm)

Features

Two independent NPN transistors in one package
Low VCE(sat) ≤ 0.4 V
Simplifies circuit design, reduces board space
Pb-Free, Halogen Free, RoHS compliant
AEC-Q101 qualified versions available
ESD HBM Class 2, CDM Class B

Applications

General-purpose amplification
Switching circuits
Differential amplifier pairs
Current mirror circuits
Low-power signal processing

Product Introduction:SMBT3904DW1T1G Product Introduction

The SMBT3904DW1T1G from onsemi is a dual NPN general-purpose bipolar transistor housed in a space-saving SOT-363 (SC-88-6) surface-mount package. By integrating two independent 2N3904-equivalent transistors in a single package, the device simplifies circuit design and reduces board area and component count. Each transistor offers 40 V VCEO, 200 mA collector current, hFE of 100-300, and 300 MHz transition frequency. The low VCE(sat) of 300 mV maximum at 50 mA ensures efficient switching operation. The compact 2.0 × 2.1 mm footprint with 1.1 mm profile makes it ideal for high-density, low-power applications. The device is Pb-Free, Halogen Free, and RoHS compliant, with AEC-Q101 qualified variants available for automotive applications.

Working Principle:SMBT3904DW1T1G Working Principle

Each NPN transistor in the SMBT3904DW1T1G operates as a conventional bipolar junction transistor. In the active region, a small base current (IB) controls a larger collector current (IC) with the current gain (hFE) ranging from 100 to 300. In saturation, VCE drops to ≤ 300 mV when properly driven (IB ≥ IC/hFE), enabling efficient switching. The two transistors are electrically independent, sharing no connections except the package substrate, allowing flexible circuit configurations such as differential pairs, current mirrors, or push-pull output stages. The 300 MHz transition frequency supports medium-speed signal processing. The SOT-363 package provides sufficient thermal resistance (833°C/W junction-to-ambient) for the 150 mW total dissipation rating.

Pin Description:SMBT3904DW1T1G Pin Definition and Functions

Pin	Name	Description
1	E1	Emitter, Transistor 1
2	B1	Base, Transistor 1
3	C2	Collector, Transistor 2
4	E2	Emitter, Transistor 2
5	B2	Base, Transistor 2
6	C1	Collector, Transistor 1

Application Scenarios:In which products and applications isSMBT3904DW1T1G used

Differential Amplifiers: Matched transistor pair in a single package improves thermal tracking and reduces offset drift
Current Mirrors: Co-located transistors provide better matching for precision bias current generation
Digital Logic Level Shifting: 40 V VCEO enables level translation between 3.3 V/5 V logic and higher voltage domains
LED Driver Switches: 200 mA per channel drives indicator LEDs with minimal VCE(sat) losses
Sensor Signal Conditioning: Low-noise amplification for temperature, pressure, and light sensors

Alternative Models:What chips are recommended as replacements for SMBT3904DW1T1G

Model	Brand	Config	VCEO (V)	IC (mA)
MBT3904DW1T1G	onsemi	Dual NPN	40	200
MBT3904DW2T1G	onsemi	Dual NPN	40	200
BC847BW	Nexperia	Single NPN	45	100
BCV61	Nexperia	Dual NPN	45	100
MMBT3904LT1G	onsemi	Single NPN	40	200