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SJM3359B1W2T1G

P-ch MOSFET, -60V, 38mΩ, -10A, WDFN-8, AEC-Q101

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Manufacturer Part：

SJM3359B1W2T1G

Package：

WDFN-8 (5 x 6 x 1.0 mm)

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Description

Product Overview

The onsemi SJM3359B1W2T1G is an automotive-qualified P-channel MOSFET rated at -60 V VDSS with low RDS(on) for high-side load switching applications. Featuring AEC-Q101 compliance, it is designed for automotive power management circuits where P-channel MOSFETs simplify high-side drive without charge pumps.

Key Specifications

Polarity P-Channel
VDSS -60 V
RDS(on) Max @ VGS=-10V 38 mΩ
ID -10 A
VGS(th) -1.0 V to -2.5 V
Qg (typ) 28 nC
Operating Temperature -55 °C to +150 °C
Package WDFN-8 (5 x 6 mm)

Features

  • AEC-Q101 qualified for automotive applications
  • P-Channel MOSFET for high-side switching without charge pump
  • Low RDS(on): 38 mΩ max at VGS = -10 V
  • -60 V drain-source voltage rating
  • Low gate charge for efficient switching
  • WDFN package with exposed thermal pad
  • Pb-free, RoHS compliant

Applications

  • Automotive high-side load switches
  • Power distribution and battery disconnect
  • Reverse polarity protection circuits
  • Automotive lighting control

The onsemi SJM3359B1W2T1G is a -60 V P-channel power MOSFET designed for automotive high-side load switching applications. As a P-channel device, it can be driven directly from a logic-level gate signal to switch the positive supply rail, eliminating the need for a charge pump or bootstrap circuitry required by N-channel high-side configurations. The 38 mΩ maximum RDS(on) at VGS = -10 V minimizes conduction losses, while the -60 V rating provides margin for 48V automotive bus systems with load dump transients. AEC-Q101 qualification ensures reliable operation in automotive environments. The WDFN-8 package with exposed thermal pad provides efficient heat dissipation in space-constrained applications. The device is suitable for battery disconnect switches, reverse polarity protection, and power distribution modules in automotive body electronics.

The SJM3359B1W2T1G operates as a voltage-controlled P-channel enhancement-mode MOSFET. When the gate-to-source voltage (VGS) is driven negative below the threshold voltage (typically -1.5 V), an inversion layer forms in the N-body region, creating a conductive channel between source and drain. The P-channel structure means that current flows from source (connected to the positive supply) to drain (connected to the load), making it ideal for high-side switching. The key advantage of P-channel MOSFETs in high-side applications is that the gate can be pulled to ground (or below the source) using a simple logic-level signal, whereas an N-channel high-side switch would require a gate voltage above the supply rail (requiring a charge pump). The trade-off is that P-channel MOSFETs typically have higher RDS(on) than comparable N-channel devices due to the lower mobility of holes vs. electrons. The 38 mΩ RDS(on) represents a good balance for -60 V rated P-channel technology.

Pin Name Type Function
1 S Source Source (connect to supply rail)
2 S Source Source (parallel connection)
3 G Gate Gate control input
4 S Source Source (parallel connection)
5-8 D Drain Drain (connect to load)
  • Automotive 12V/48V high-side load switch
  • Battery disconnect and reverse polarity protection
  • Automotive LED lighting power control
  • Power distribution module switch in body electronics
Manufacturer Part Number Package Notes
Infineon BTS443P TO-252 Smart high-side switch alternative
Vishay SI7465DP-T1-GE3 PowerPAK-8 P-ch, -60V, lower RDS(on)
onsemi FDD8580 TO-252 P-ch, -60V, DPAK alternative
ST STF20N60M2 TO-220 P-ch, -60V, higher current
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