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NX7002AKS

Dual N-ch Trench MOSFET, 60V, 190mA, SOT-363, logic-level gate

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Manufacturer Part：

NX7002AKS

Package：

SOT-363 (SC-88) (3.0 x 1.4 x 1.0 mm)

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Description

Product Overview

The NX7002AKS from NXP Semiconductors is a dual N-channel enhancement mode Trench MOSFET in a compact SOT-363 (SC-88) surface-mount package. Rated at 60V VDS with 190mA continuous drain current per channel, it is designed for low-power switching and logic-level drive applications.

Key Specifications

VDS (Max) 60V
ID (Per Channel) 190mA
RDS(on) Max 4.5 Ohm @ VGS=10V
VGS(th) Max 2.1V
Power Dissipation 325mW
Configuration Dual N-Channel
Package SOT-363 (SC-88)
Operating Temperature -55°C ~ 150°C

Features

  • Dual N-channel in ultra-small SOT-363 package
  • Logic-level gate threshold
  • Trench MOSFET technology for low RDS(on)
  • Enhancement mode operation
  • Fast switching: 7ns rise, 5ns fall time

Applications

  • Low-power load switching
  • Logic-level signal switching
  • Battery-powered portable devices
  • Level translation circuits
  • Small-signal analog switching

The NX7002AKS is a dual N-channel enhancement mode Trench MOSFET from NXP Semiconductors, fabricated using advanced trench technology to achieve low on-resistance in an ultra-compact footprint. Housed in a 6-pin SOT-363 (SC-88) package, each channel supports up to 190mA continuous drain current with a maximum drain-source voltage of 60V. The logic-level gate threshold (VGS(th) max 2.1V) allows direct drive from 3.3V or 5V microcontrollers without additional gate drive circuitry, simplifying system design.

The NX7002AKS integrates two independent N-channel enhancement mode MOSFETs on a single die using trench gate technology. Each MOSFET operates as a voltage-controlled switch: when the gate-source voltage exceeds the threshold, a conductive channel forms between drain and source, allowing current flow. The trench structure reduces cell size and on-resistance compared to planar MOSFETs. The dual configuration enables compact push-pull, half-bridge, or independent switching topologies in a single package.

Pin Name Type Function
1 S1 Source Source of MOSFET 1
2 G1 Gate Gate of MOSFET 1
3 S2 Source Source of MOSFET 2
4 G2 Gate Gate of MOSFET 2
5 D2 Drain Drain of MOSFET 2
6 D1 Drain Drain of MOSFET 1
  • Low-power load switching in portable electronics
  • Logic-level signal routing and multiplexing
  • Battery management in handheld devices
  • Level shifting between 3.3V and 5V domains
  • Analog signal switching in instrumentation
Manufacturer Part Number Package Notes
NXP NX7002AK,215 SOT-23 Single N-ch, 60V, 190mA
onsemi NTR4003NT1G SOT-23 Single N-ch, 60V, 190mA
Infineon BCR402U SOT-363 Dual N-ch alternative
Diodes Inc DMN65D8L SOT-363 Dual N-ch, 60V
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