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NX3008NBKS115

Dual N-CH MOSFET, 20V 1.15A, 120mOhm, TSSOP6

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Manufacturer Part：

NX3008NBKS115

Package：

TSSOP6 / SOT363-1 (2.0 x 1.25 x 0.85 mm)

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Description

Product Overview

The NX3008NBKS115 from Nexperia is a dual N-channel Trench MOSFET with 20V VDS and low on-resistance in a small 6-pin TSSOP6 (SOT363-1) package.

Key Specifications

Type Dual N-Channel Enhancement Mode MOSFET
Configuration 2 independent N-channel MOSFETs
VDS 20 V
VGS +/-8 V
ID 1.15 A (per MOSFET)
RDS(on) (max) 120 mOhm @ VGS=4.5V
RDS(on) (max) 90 mOhm @ VGS=2.5V (typical)
VGS(th) 0.65V (typical)
Package TSSOP6 / SOT363-1 (2.0 x 1.25 mm)
Operating Temperature -55C to +150C (TJ)

Features

  • Dual N-channel MOSFET in TSSOP6
  • 20V, 1.15A per channel
  • Low 120mOhm RDS(on) at 4.5V gate drive
  • Sub-1V gate threshold for logic-level drive
  • Trench MOSFET technology
  • Independent source pins for flexible circuit design

Applications

  • Load switching and power routing
  • Battery management
  • Logic-level power control
  • DC-DC converter synchronous switch

The NX3008NBKS115 from Nexperia is a dual N-channel enhancement-mode Trench MOSFET in a compact TSSOP6 (SOT363-1) package. The device integrates two independent N-channel MOSFETs, each rated at 20V VDS and 1.15A ID with a maximum RDS(on) of 120mOhm at VGS=4.5V. The trench MOSFET technology provides low on-resistance in a small die area, enabling the compact package footprint. The sub-1V gate threshold (0.65V typical) allows direct drive from low-voltage logic levels including 1.8V and 2.5V systems. The independent source pins allow each MOSFET to be used in separate circuit paths, such as a half-bridge or two independent load switches. The 115 suffix indicates tape and reel packaging.

The NX3008NBKS115 uses trench MOSFET technology where vertical trenches are etched into the silicon and lined with gate oxide and polysilicon gate electrodes. This structure creates a U-shaped channel on the trench sidewalls, providing a large channel width per unit die area and resulting in low RDS(on). Each MOSFET operates as a standard enhancement-mode N-channel device: when the gate-source voltage exceeds the threshold (VGS(th) = 0.65V typical), an inversion layer forms in the P-body region, connecting the N+ source to the N-epitaxial drain, allowing current to flow. The RDS(on) of 120mOhm at 4.5V gate drive represents the total channel resistance plus package resistance. The two MOSFETs are electrically independent with separate gate, source, and drain connections, but share the same substrate (connected to source pins). This allows them to be used in any circuit configuration, including back-to-back for bidirectional switching or as a half-bridge.

Pin Name Type Function
1 S1 I/O MOSFET 1 Source
2 G1 Input MOSFET 1 Gate
3 S2 I/O MOSFET 2 Source
4 G2 Input MOSFET 2 Gate
5 D2 I/O MOSFET 2 Drain
6 D1 I/O MOSFET 1 Drain
  • Dual load switch for 2 independent 3.3V power rails with 1.8V GPIO control
  • Half-bridge driver for small BLDC motor with back-to-back MOSFET
  • Battery management dual-path switch with independent gate control
  • DC-DC buck converter synchronous rectifier + high-side switch pair
Manufacturer Part Number Package Notes
Nexperia NX3008NBK,315 TSSOP6 Same device, different packing
onsemi NTMD3N02R2G SC-88 Dual N-ch, 20V, similar class
Diodes Inc DMN2075U-7 SOT-363 Dual N-ch, 20V, similar
Nexperia BSS138PS,215 SOT-363 Dual N-ch, 50V, lower current
Vishay Si1902DL SOT-363 Dual N-ch, 20V, alternative
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