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NTR4502PT1G

P-channel MOSFET, -30V, -1.9A, 200mΩ, SOT-23-3 for load switching and battery protection

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Manufacturer Part：

NTR4502PT1G

Package：

SOT-23-3 (TO-236)

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Description

Product Overview

The NTR4502PT1G from onsemi is a P-channel enhancement-mode MOSFET in a compact SOT-23-3 surface-mount package. With a -30 V drain-source voltage rating, -1.9 A continuous drain current, and 200 mΩ maximum on-resistance at VGS = -10 V, it is designed for load switching, battery protection, and power management in portable and space-constrained applications.

Key Specifications

Channel Type P-Channel Enhancement
VDS (Drain-Source Voltage) -30 V
ID (Continuous Drain Current) -1.9 A (Ta), -1.13 A (Ta, surface mount)
RDS(ON) Max 200 mΩ @ VGS = -10 V, ID = -1.95 A
VGS(th) Max -3 V @ ID = -250 µA
Gate Charge (Qg) Max 10 nC @ VGS = -10 V
Input Capacitance (Ciss) Max 200 pF @ VDS = -15 V
Power Dissipation 400 mW (Tj)
Operating Temperature -55°C to 150°C (TJ)
Package SOT-23-3 (TO-236)

Features

  • Low 200 mΩ on-resistance for efficient power switching
  • Compact SOT-23-3 package for space-constrained designs
  • 30 V drain-source voltage rating suitable for single-cell Li-ion battery applications
  • Low gate charge (10 nC) for fast switching with minimal drive loss

Applications

  • Battery charging/discharging load switches in portable devices
  • Power management and load switching in handheld electronics
  • Li-ion battery protection circuits
  • DC-DC converter synchronous rectification
  • Logic-level power gating in low-voltage systems

The NTR4502PT1G from onsemi is a P-channel enhancement-mode power MOSFET housed in a miniature SOT-23-3 surface-mount package. It features a drain-source voltage rating of -30 V and a continuous drain current capability of -1.9 A, with a maximum on-resistance of 200 mΩ at VGS = -10 V. The device is optimized for load switching and battery protection applications in portable electronics, where its low on-resistance minimizes conduction losses and its compact SOT-23-3 footprint enables high-density PCB layouts. The 10 nC maximum gate charge supports efficient switching at moderate frequencies with simple gate drive circuits.

The NTR4502PT1G operates as a voltage-controlled switch: (1) Enhancement Mode — with VGS = 0 V (gate at source potential), the P-channel MOSFET is off, and no current flows from source to drain; (2) Turn-On — applying a negative gate-to-source voltage (VGS < VGS(th)) creates an inversion layer (P-type channel) beneath the gate oxide, connecting the P+ source and drain regions and allowing hole current to flow from source to drain; (3) On-State — at VGS = -10 V, the channel is fully enhanced with RDS(ON) of 200 mΩ maximum, providing efficient conduction with minimal voltage drop; (4) Body Diode — an inherent P-N junction between body and drain provides a parasitic diode that conducts when VSD is forward biased, useful in battery protection applications.

Pin Name Function
1 Gate (G) Gate terminal — drive with negative voltage relative to source to turn on
2 Source (S) Source terminal — typically connected to supply rail
3 Drain (D) Drain terminal — typically connected to load
  • Single-cell Li-ion battery pack protection switch with -30 V blocking for overvoltage conditions
  • Portable device power gating using GPIO-controlled P-MOSFET load switch with low RDS(ON)
  • USB On-The-Go power path switching in mobile devices
  • DC-DC buck converter high-side P-MOSFET for 5 V to 3.3 V step-down
  • Smartphone battery charging/discharging path selection with body diode conduction
Model Manufacturer Key Difference
FDN352AP onsemi Similar P-MOSFET, lower RDS(ON)
DMP3160L-7 Diodes Inc -20 V, -1.2 A alternative in SOT-23
SI2301DS Vishay -20 V, -2.2 A, similar SOT-23 P-MOSFET
AO3401A Alpha & Omega -30 V, -4 A, lower RDS(ON) in SOT-23
IRLML6402TRPBF Infineon -20 V, -3.7 A, very low RDS(ON)
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