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NTMD6N02R2G

onsemi dual N-ch MOSFET, 20V, 3.5A, 55mOhm RDS(ON) @ 4.5V, SOIC-8, avalanche rated

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Manufacturer Part：

NTMD6N02R2G

Package：

SOIC-8 (R2 suffix, 4.9mm x 3.9mm)

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Description

Product Overview

The NTMD6N02R2G from onsemi is a dual N-channel enhancement-mode MOSFET in an SOIC-8 package. Rated at 20V VDSS with 55mOhm maximum RDS(ON) at 4.5V VGS, it provides two independent low-side switches in a single package, ideal for load switching, DC-DC converter, and battery management applications where board space is at a premium.

Key Specifications

Type Dual N-channel enhancement-mode
Drain-Source Voltage (VDSS) 20V
Continuous Drain Current (ID) 3.5A per FET (25C)
RDS(ON) 55mOhm max @ VGS=4.5V
Gate Threshold (VGS(th)) 1.0V ~ 2.0V
Gate Charge 12nC typical @ VGS=4.5V
Input Capacitance 680pF typical
Power Dissipation 2.0W per FET (25C)
Operating Temperature -55C ~ +150C

Features

  • Dual independent N-channel MOSFETs in one SOIC-8 package
  • Low 55mOhm RDS(ON) at 4.5V VGS for efficient switching
  • Logic-level gate threshold (1.0V to 2.0V)
  • Fully avalanche rated for rugged operation
  • Low gate charge of 12nC for fast switching

Applications

  • DC-DC synchronous buck converter switches
  • Dual load switches for power rail control
  • Battery management and protection circuits
  • Motor drive H-bridge half-bridge pairs
  • Hot-swap and inrush current limiters

The NTMD6N02R2G from onsemi integrates two independent N-channel enhancement-mode MOSFETs in a single SOIC-8 surface-mount package. Each MOSFET is rated for 20V drain-source voltage and 3.5A continuous drain current, with a maximum on-resistance of 55mOhm at VGS=4.5V. The logic-level gate threshold (1.0V to 2.0V) enables direct drive from 3.3V and 5V microcontroller GPIO pins. The dual configuration makes the NTMD6N02R2G particularly useful for synchronous buck converter designs where one FET serves as the control switch and the other as the synchronous rectifier, or for complementary load switch pairs in battery management systems. The device is fully avalanche rated, providing robustness against inductive energy during switching transients.

The NTMD6N02R2G contains two independent N-channel MOSFETs, each with its own gate, source, and dual drain pins for low-resistance connection. When the gate-to-source voltage exceeds the threshold (VGS(th) = 1.0V to 2.0V), the channel conducts between drain and source. The low RDS(ON) of 55mOhm at VGS=4.5V minimizes conduction losses during switching. In synchronous buck converter applications, the control FET is driven with a PWM signal while the synchronous FET is driven complementarily to replace the freewheeling diode, reducing conduction losses. The 12nC gate charge enables switching frequencies up to several hundred kHz with reasonable gate drive power dissipation. The avalanche rating ensures the device can absorb energy from inductive kickback without external clamp circuits.

Pin Name Function
1 S1 Source of FET 1
2 G1 Gate of FET 1
3 S2 Source of FET 2
4 G2 Gate of FET 2
5 D2 Drain of FET 2
6 D2 Drain of FET 2
7 D1 Drain of FET 1
8 D1 Drain of FET 1
  • DC-DC converters: Use as synchronous buck switch pair (high-side + low-side) for 3.3V/1.8V point-of-load regulation
  • Load switches: Independently control two power rails from a microcontroller with logic-level gate drive
  • Battery management: Implement charge/discharge switching and cell balancing in multi-cell battery packs
  • Motor drive: Form half-bridge pairs for bidirectional DC motor or stepper motor drive stages
  • Hot-swap controllers: Limit inrush current and disconnect faulty cards in hot-pluggable backplane systems
Model Brand VDSS RDS(ON) Package
FDS6900A onsemi 20V 33mOhm SOIC-8
SI4532DY Vishay 30V 30mOhm SOIC-8
IRF7341PbF Infineon 30V 32mOhm SOIC-8
NTMFS4833NS onsemi 30V 15mOhm Power33
AO4407A AOS 30V 16mOhm SOIC-8
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