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NGTB50N120FL2WG

1200V 50A FS2 Trench IGBT, 2.2V VCEsat, co-pack diode, 10us S/C, TO-247, solar/UPS

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Manufacturer Part：

NGTB50N120FL2WG

Package：

TO-247 (3-pin)

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Description

Product Overview

The NGTB50N120FL2WG from onsemi is a 1200V, 50A Field Stop II Trench IGBT with co-packaged soft recovery diode in a TO-247 package. Featuring 2.2V VCE(sat), 10us short circuit capability, and TJmax=175°C, it is optimized for solar inverter and UPS applications.

Key Specifications

VCES 1200 V
IC (TC=25°C) 100 A
IC (TC=100°C) 50 A
VCE(sat) 2.20 V typical @ IC=50A
Eoff 1.40 mJ typical @ 600V, 50A
Gate Charge (Qg) 311 nC typical
Short Circuit Withstand 10 µs @ VGE=15V
Co-packaged Diode VF 2.0 V typical @ IF=50A
Diode trr 256 ns typical
PD (TC=25°C) 535 W
TJ Max 175°C
Package TO-247 (3-pin)

Features

  • Field Stop II Trench technology for low VCE(sat) and minimal switching loss
  • 1200V/50A rating with 2.2V typical saturation voltage at 50A
  • 10µs short circuit withstand capability for motor drive protection
  • Co-packaged soft and fast reverse recovery anti-parallel diode
  • TJmax=175°C for high-temperature operation and improved power cycling

Applications

  • Solar inverter power stage switching at 1200V bus
  • Uninterruptible power supply (UPS) inverter modules
  • Welding equipment power converters

The NGTB50N120FL2WG from onsemi is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) featuring Field Stop II Trench construction. This technology provides superior performance in demanding switching applications, offering both low on-state voltage (2.2V typical at IC=50A) and minimal switching loss (Eoff=1.40mJ typical). The device is specifically optimized for solar inverter and UPS applications. A soft and fast co-packaged free-wheeling diode with low forward voltage is integrated in the same package, simplifying inverter bridge design. The 10us short circuit withstand capability provides robust protection during fault conditions. The maximum junction temperature rating of 175°C enables higher power cycling capability and operation in high-temperature environments.

The NGTB50N120FL2WG is a Field Stop II Trench IGBT with co-packaged anti-parallel diode. The trench gate provides high channel density for low on-state voltage. The field stop layer is a lightly-doped N-type buffer layer between the N-drift region and the P+ collector, allowing a thinner drift region that reduces VCE(sat) while maintaining 1200V blocking. During forward conduction, the MOS channel injects electrons into the drift region, and hole injection from the P+ collector further reduces resistance. During turn-off, the FS layer accelerates carrier recombination, reducing tail current duration and Eoff. The co-packaged diode is optimized for soft and fast reverse recovery (trr=256ns typical), minimizing EMI during commutation.

Pin Name Function
1 Gate Gate terminal (control input)
2 Collector Collector terminal (high voltage)
3 Emitter Emitter terminal (common with diode anode)
  • Solar inverter power stage IGBT switching at 1200V DC bus
  • UPS inverter half-bridge or full-bridge modules with co-packaged diode
  • Welding equipment high-frequency power converters
Manufacturer Part Number Package Notes
onsemi NGTB50N60FL2WG TO-247 600V version
Infineon IKW50N120T2 TO-247 1200V TrenchStop
onsemi FGH50N120FDT TO-247 1200V Field Stop
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