Product Overview
The NDS356AP from onsemi is a P-channel logic-level enhancement mode MOSFET in a SOT-23-3 (SuperSOT-3) package. Rated at -30V VDS and -1.1A with 300mOhm RDS(on) at -4.5V VGS, designed for high-side load switching in portable electronics.
Key Specifications
| VDS (Max) | -30V |
| ID (Continuous) | -1.1A |
| RDS(on) @ VGS=-4.5V | 0.3 Ohm max |
| RDS(on) @ VGS=-10V | 0.2 Ohm max |
| VGS(th) | -0.7V ~ -2.5V |
| Package | SOT-23-3 |
| Operating Temperature | -55°C to +150°C |
Features
- P-channel for high-side switching
- Logic-level gate drive (4.5V compatible)
- SuperSOT-3 package with superior thermal performance
- High cell density DMOS technology
- Complementary N-channel: NDS331N
Applications
- High-side load switching in notebooks
- Power management in portable electronics
- Battery disconnect and power gating
- DC-DC converter high-side MOSFET
- Audio amplifier muting circuit