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NDS331N

onsemi P-ch MOSFET, -60V, -1.5A, 2.5 ohm RDS(ON), SOT-23, high-side switch

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Manufacturer Part：

NDS331N

Package：

SOT-23 (3-pin, 2.9mm x 1.3mm)

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Description

Product Overview

The NDS331N from onsemi/Fairchild is a -60V, -1.5A P-channel enhancement-mode small-signal MOSFET in a SOT-23 package. With 2.5 ohm maximum RDS(ON) at VGS=-10V and a -1.0V to -2.5V gate threshold, it serves as a convenient high-side load switch and battery disconnect device in portable and battery-powered applications.

Key Specifications

Type P-channel enhancement-mode
Drain-Source Voltage (VDSS) -60V
Continuous Drain Current (ID) -1.5A
RDS(ON) 2.5 ohm max @ VGS=-10V
Gate Threshold (VGS(th)) -1.0V ~ -2.5V
Power Dissipation 400mW (25C)
Transconductance 400mS typical
Input Capacitance 170pF typical
Package SOT-23 (3-pin)

Features

  • -60V drain-source rating for high-side switching up to 48V rails
  • Low gate threshold enables direct MCU drive from 3.3V/5V logic
  • Compact SOT-23 package for space-constrained designs
  • 400mS transconductance for efficient switching
  • Complementary to NDS335N (N-channel) for push-pull configurations

Applications

  • High-side load switching and power rail control
  • Battery disconnect and reverse polarity protection
  • Power management in portable devices
  • Logic-level voltage translation
  • LED and backlight power control

The NDS331N from onsemi (formerly Fairchild) is a P-channel enhancement-mode small-signal MOSFET rated for -60V drain-source voltage and -1.5A continuous drain current in a compact SOT-23 surface-mount package. With a maximum on-resistance of 2.5 ohm at VGS=-10V and 4.0 ohm at VGS=-4.5V, it provides efficient switching for moderate current loads. The gate threshold voltage of -1.0V to -2.5V allows the device to be turned on with a relatively small gate-to-source voltage differential, making it compatible with 3.3V and 5V logic for high-side load switching applications. The NDS331N is particularly useful as a high-side power switch, where the P-channel architecture eliminates the need for gate drive voltage above the supply rail, simplifying the control circuit compared to N-channel alternatives.

The NDS331N operates as a voltage-controlled switch in the high-side (positive rail) configuration. When the gate is pulled to ground (VGS = -VDD), the MOSFET turns on and connects the load to the supply rail through the channel. When the gate is pulled to the source voltage (VGS = 0V), the MOSFET turns off and disconnects the load. The on-resistance of 2.5 ohm at VGS=-10V causes a voltage drop proportional to the load current (e.g., 1.5A x 2.5 ohm = 3.75V), which must be considered in low-voltage designs. The body diode inherent in the MOSFET structure conducts from source to drain, providing a natural path for inductive kickback but also allowing current flow when the MOSFET is off if the drain voltage exceeds the source voltage by a diode drop.

Pin Name Function
1 Gate Gate Input
2 Source Source Terminal
3 Drain Drain Terminal
  • High-side load switch: Control 3.3V/5V/12V power rails from MCU GPIO without boost circuitry required by N-channel FETs
  • Battery disconnect: Implement battery disconnect and reverse polarity protection in portable devices up to 48V systems
  • Power management: Gate power-hungry peripherals on and off in battery-operated systems to extend runtime
  • Logic-level translation: Convert 3.3V logic to higher-voltage control signals for industrial actuators and relays
  • LED backlight control: Switch LED string power rails in handheld displays and indicator panels
Model Brand VDSS ID RDS(ON)
MMBF5460 onsemi -60V -180mA 10 ohm
IRML6402 Infineon -20V -1.3A 80mOhm
SI2307DS Vishay -30V -2.2A 80mOhm
NDS335N onsemi 60V 1.5A 2 ohm (N-ch)
AO3401A AOS -30V -4.3A 40mOhm
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