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MPQ1923GRE-AEC1

AEC-Q100 100V 8A half-bridge gate driver, adjustable dead time, SPI diagnostics, SOIC-16 EP

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Manufacturer Part：

MPQ1923GRE-AEC1

Package：

SOIC-16 EP (10.3 x 7.5 x 2.35 mm)

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Description

Product Overview

The MPQ1923GRE-AEC1 is a Monolithic Power Systems (MPS) AEC-Q100 qualified 100V, 8A half-bridge gate driver IC for high-voltage automotive motor drive applications. It provides powerful gate drive capability with adjustable dead time, cross-conduction protection, and comprehensive diagnostics via SPI interface.

Key Specifications

Maximum Voltage 100V
Configuration Half-bridge (high-side + low-side driver)
Gate Drive Current 8A peak source/sink
Dead Time Adjustable
Interface PWM + SPI (16-bit)
Operating Temperature -40°C to +150°C
Qualification AEC-Q100

Features

  • AEC-Q100 qualified for automotive motor drive
  • 100V maximum bridge voltage for 48V systems
  • 8A peak gate drive current for large MOSFETs
  • Adjustable dead time via SPI
  • Cross-conduction (shoot-through) protection
  • Over-current detection via VDS sensing
  • SPI diagnostics with fault status registers
  • Thermal warning and shutdown
  • Under-voltage lockout on all supplies

Applications

  • 48V mild hybrid motor drives
  • Electric power steering (EPS) systems
  • Electric water and oil pumps
  • BLDC motor drives for 48V systems
  • High-voltage industrial motor control

The MPQ1923GRE-AEC1 is an MPS AEC-Q100 qualified 100V, 8A half-bridge gate driver IC designed for high-voltage automotive motor drive applications. With 8A peak gate drive current, it can drive large external N-channel MOSFETs in 48V mild hybrid, EPS, and pump motor systems. Features include adjustable dead time via SPI, cross-conduction protection, VDS over-current detection, and comprehensive diagnostics. The SOIC-16 EP package provides efficient thermal dissipation for high-power automotive environments.

The MPQ1923GRE-AEC1 drives two external N-channel MOSFETs in half-bridge configuration. The PWM input signal controls the switching state, while the SPI interface configures dead time, current limit thresholds, and diagnostic modes. The high-side driver uses a bootstrap capacitor for floating gate drive, while the low-side driver is referenced to ground. The adjustable dead time prevents cross-conduction (shoot-through) by ensuring both MOSFETs are off during transitions. The VDS sensing circuit monitors the MOSFET drain-source voltage during the on-state to detect over-current conditions. When VDS exceeds the programmed threshold, a fault is reported via SPI and the driver is disabled. The SPI provides real-time diagnostic information including over-current, under-voltage, and over-temperature status.

Pin Mnemonic Description
1 VCC Logic supply (5V)
2 PWM PWM input signal
3 EN Enable input
4 nFAULT Fault output (active low)
5-8 SPI SPI interface (SDI/SDO/CLK/CS)
9 BST Bootstrap capacitor
10 OUTH High-side gate drive output
11 SH Switch node (high-side source)
12 OUTL Low-side gate drive output
13 VDS VDS sense input
14 VHB Bridge supply (up to 100V)
15-16 GND/PGND Ground connections
  • 48V mild hybrid BSG/ISG motor drive with 100V bridge voltage rating
  • Electric power steering (EPS) half-bridge motor driver with SPI diagnostics
  • 48V electric water and oil pump BLDC motor control
  • High-voltage industrial BLDC motor driver with adjustable dead time
  • Automotive 48V-to-12V DC-DC converter half-bridge driver stage
Model Manufacturer Key Difference
TLE9180D-32QK Infineon 3-phase, 40V, different topology
DRV8353RH TI 3-phase, 100V gate driver
NCV1124DR2G onsemi Dual ignition driver, different application
A4919 Allegro 3-phase MOSFET driver, 60V
IR2110PBF Infineon Half-bridge, 500V, no SPI
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