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MMBF170

onsemi N-ch MOSFET, 60V, 500mA, 1.8 ohm RDS(ON), SOT-23, 10ns switching

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Manufacturer Part：

MMBF170

Package：

SOT-23 (3-pin, 2.9mm x 1.3mm)

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Description

Product Overview

The MMBF170 from onsemi is a 60V, 500mA N-channel enhancement-mode small-signal MOSFET in a SOT-23 package. With 1.8-ohm maximum RDS(ON) at VGS=10V and fast switching times of 10ns rise / 8ns fall, this general-purpose MOSFET is ideal for low-power switching, relay driving, and logic-level conversion in compact surface-mount designs.

Key Specifications

Type N-channel enhancement-mode
Drain-Source Voltage (VDSS) 60V
Continuous Drain Current (ID) 500mA
RDS(ON) 1.8 ohm max @ VGS=10V
Gate Threshold (VGS(th)) 1.0V ~ 2.5V
Power Dissipation 350mW (25C)
Transconductance 200mS typical
Switching Time 10ns rise, 8ns fall (typical)
Package SOT-23 (3-pin)

Features

  • 60V drain-source voltage for medium-voltage switching
  • Fast 10ns/8ns switching for high-frequency drive
  • Logic-level threshold (1.0V~2.5V) for MCU interface
  • Compact SOT-23 footprint for dense PCB layouts
  • Low 60pF input capacitance for easy gate drive

Applications

  • Low-power relay and solenoid drivers
  • LED and lamp switching
  • Logic-level voltage translation
  • Small motor speed control
  • General-purpose switching and load control

The MMBF170 from onsemi is a general-purpose N-channel enhancement-mode small-signal MOSFET in a 3-pin SOT-23 surface-mount package. Rated for 60V drain-source voltage and 500mA continuous drain current, it provides a cost-effective switching solution for low-to-medium power loads. The on-resistance of 1.8 ohm maximum at VGS=10V and 2.4 ohm at VGS=5V ensures reasonable conduction losses in switching applications. With a gate threshold voltage range of 1.0V to 2.5V, the MMBF170 can be driven directly from 3.3V or 5V logic, though a 5V gate drive provides significantly lower RDS(ON). The fast switching characteristics (10ns rise, 8ns fall) make it suitable for switching frequencies up to several hundred kHz. The 350mW power dissipation rating is adequate for pulsed or low-duty-cycle switching of small loads.

The MMBF170 operates as a voltage-controlled switch. When the gate-to-source voltage exceeds the threshold voltage (VGS(th) = 1.0V to 2.5V), the MOSFET channel conducts between drain and source. The conduction path resistance (RDS(ON)) decreases as VGS increases above the threshold, reaching a minimum of 1.8 ohm at VGS=10V. During switching, the gate capacitance (approximately 60pF) must be charged and discharged by the gate driver, determining the rise and fall times. The 200mS transconductance indicates the change in drain current per volt of gate drive. In switching applications, a gate resistor limits the peak gate current, while a gate-to-source pull-down resistor ensures the MOSFET turns off when the gate drive is floating. For inductive loads, a free-wheeling diode or avalanche absorption handles the energy stored during turn-off.

Pin Name Function
1 Gate Gate Input
2 Source Source Terminal
3 Drain Drain Terminal
  • Relay drivers: Switch 5V/12V relay coils from 3.3V or 5V MCU GPIO with gate-level compatibility
  • LED switching: Control indicator LEDs or small LED strings up to 500mA with PWM dimming capability
  • Level translation: Convert 3.3V logic signals to higher-voltage domains (up to 60V) for industrial interfaces
  • Small motor control: Drive fans, vibration motors, and small DC motors with simple on/off or PWM speed control
  • General switching: Interface push-buttons, sensors, or logic outputs to loads requiring higher voltage or current
Model Brand VDSS ID RDS(ON)
2N7002 onsemi 60V 115mA 7.8 ohm
BSS138 NXP 50V 220mA 6 ohm
2N7002K onsemi 60V 300mA 2 ohm
DMN2075U Diodes Inc 20V 750mA 75mOhm
AO3400A AOS 30V 5.8A 26mOhm
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