The MM3Z3V0ST1G operates in the reverse breakdown (Zener) region. When reverse-biased voltage exceeds the Zener knee voltage (approximately 2.90 V), current begins to flow through the depletion region. In this 3 V device, the breakdown mechanism is primarily quantum tunneling (true Zener effect) rather than avalanche multiplication, which dominates at higher voltages. The low dynamic impedance of 100 Ohm at the test current (5 mA) provides reasonable regulation against input voltage and load current variations. The device maintains stable voltage across its operating temperature range with a temperature coefficient of approximately -3.5 mV per degree C, which is characteristic of low-voltage Zener diodes. The glass-passivated junction ensures stable leakage and breakdown characteristics over time.