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MBR0530T1G

30V, 500mA Schottky barrier rectifier with 385mV forward voltage in SOD-123 package

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Manufacturer Part：

MBR0530T1G

Package：

SOD-123 (2.65 x 1.60 x 1.10 mm)

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Description

Product Overview

The MBR0530T1G from onsemi is a 30V, 500mA Schottky barrier rectifier in a compact SOD-123 surface-mount package. It features a low forward voltage drop of 385mV typical at 500mA, making it ideal for low-voltage rectification and polarity protection applications. The T1G suffix indicates lead-free tape and reel packaging.

Key Specifications

Peak Reverse Voltage (VRRM) 30V
Forward Current (IF) 500mA (Continuous)
Forward Voltage (VF) 385mV (Typ) @ IF=500mA
Reverse Leakage Current (IR) 200µA (Max) @ VR=30V
Package SOD-123, 2-pin SMD
Operating Temperature -65°C ~ +150°C
Product Status Active

Features

  • Low forward voltage drop for reduced power loss
  • High-temperature glass passivated junction
  • Lead-free and RoHS compliant (T1G suffix)
  • Tape and reel packaging for automated assembly
  • High surge current capability
  • Avalanche capability rated

Applications

  • Low-voltage power supply rectification
  • Polarity protection and blocking diodes
  • DC-DC converter free-wheeling diodes
  • Battery charging circuits
  • Portable electronics power management

The MBR0530T1G is a surface-mount Schottky barrier rectifier designed for low-voltage, high-frequency rectification applications. The Schottky barrier construction provides a very low forward voltage drop of typically 385mV at 500mA, significantly reducing conduction losses compared to standard silicon PN junction diodes. The device is housed in the compact SOD-123 package, making it suitable for space-constrained applications such as portable electronics and DC-DC converters.

A Schottky diode is formed by the junction of a metal (typically platinum or similar) and an N-type semiconductor. Unlike conventional PN junction diodes, Schottky diodes operate with majority carrier conduction, which eliminates the reverse recovery charge and enables very fast switching. The metal-semiconductor junction has a lower barrier potential than a silicon PN junction, resulting in the characteristic low forward voltage drop. However, this also results in higher reverse leakage current compared to PN junction diodes.

Pin Name Function
1 Cathode Positive terminal (bar side of package)
2 Anode Negative terminal (opposite end)
  • DC-DC Converter Free-Wheeling: Low VF reduces conduction loss in buck converter free-wheeling path
  • Battery Polarity Protection: 30V reverse rating protects against reverse battery installation in portable devices
  • Power Supply OR-ing: Low forward drop enables efficient redundant supply OR-ing with minimal voltage loss
  • Charge Pump Diode: Fast switching with no reverse recovery enables efficient charge pump operation
Model Manufacturer Key Difference
MBR0520LT1G onsemi 20V version, same package
MBR0540T1G onsemi 40V version, same package
SD103AWS onsemi 40V, 350mA, SOD-323
RB521ZS8A ROHM 30V, 500mA, SOD-523
ZLLS410 Diodes Inc 40V, 570mA, SOD-123
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Contact Information

Email: info@materialparts.com

Tel / WhatsApp: +86 13760382860

Service & Packaging

Materialparts is a professional electronic component supplier based in Shenzhen, China, with over 20 years of global trading experience. We integrate component procurement, quality inspection, technical support, customized packaging, and global delivery services to provide one-stop supply chain solutions. Our business covers industrial control, automotive electronics, consumer electronics, medical devices and other industries. We always adhere to genuine sources, stable supply and considerate after-sales service.

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Contact Information

For service consultation or packaging customization, please feel free to contact us:
Email: info@materialparts.com
Tel / WhatsApp: +86 13760382860
Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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