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IRFB4310PBF

100V 130A N-ch MOSFET, 7mOhm, TO-220

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Manufacturer Part：

IRFB4310PBF

Package：

TO-220 (15.6 x 10.4 x 4.6 mm, through-hole)

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Description

Product Overview

The IRFB4310PBF from Infineon Technologies is a 100V N-channel StrongIRFET power MOSFET with 130A ID, 7mOhm RDS(ON), and 300W power dissipation in TO-220 through-hole package.

Key Specifications

Channel Type N-Channel Enhancement
Drain-Source Voltage (VDSS) 100 V
Continuous Drain Current (ID) 130 A @ TC=25C
Pulsed Drain Current (IDM) 520 A
RDS(ON) @ VGS=10V 5.6 mOhm typ / 7 mOhm max
Gate Threshold (VGS(th)) 2.0V min / 4.0V max
Total Gate Charge (Qg) 170 nC typical @ VGS=10V
Input Capacitance (Ciss) 7670 pF @ VDS=50V
Power Dissipation (PD) 300 W @ TC=25C
Thermal Resistance (RthJC) 0.45 C/W
Max Junction Temperature 175 C
Package TO-220 (PBF suffix)
Operating Temperature -40 to +175 C (TJ)

Features

  • 7mOhm ultra-low on-resistance for minimum conduction losses
  • 130A high current rating for demanding power applications
  • 300W power dissipation with low 0.45C/W thermal resistance
  • StrongIRFET technology optimized for ruggedness and availability
  • Halogen-free and RoHS compliant

Applications

  • Switch-mode power supply (SMPS) primary switch
  • UPS inverter and battery management
  • DC motor drive and H-bridge
  • Solar inverter power stage
  • High-current DC-DC converter

The IRFB4310PBF from Infineon Technologies is a 100V N-channel StrongIRFET power MOSFET in TO-220 through-hole package. The device features 7mOhm maximum on-resistance at VGS=10V, 130A continuous drain current rating, and 300W power dissipation capability. The ultra-low RDS(ON) minimizes conduction losses in high-current switching applications. The StrongIRFET family is optimized for broad availability and ruggedness, with enhanced gate, avalanche, and dynamic dV/dt immunity. The 170nC total gate charge requires a robust gate driver for efficient switching. The PBF suffix denotes lead-free, halogen-free construction in tube packaging.

The IRFB4310PBF operates as a high-current N-channel power MOSFET. (1) When VGS exceeds the threshold voltage (2.0-4.0V), the MOSFET channel forms and current flows from drain to source. The ultra-low RDS(ON) of 7mOhm at VGS=10V minimizes conduction losses: at 50A drain current, the conduction loss is only 17.5W (P = I2 x RDS(ON) = 502 x 0.007). This makes the device highly efficient for high-current, low-frequency switching applications. (2) The 170nC total gate charge requires sufficient gate drive current for efficient switching. At a gate drive voltage of 10V and drive resistance of 5 Ohm, the turn-on time is approximately Qg x Rdrive / Vdrive = 170nC x 5 / 10V = 85ns. For high-frequency applications (>100kHz), the switching losses become significant and a dedicated gate driver IC is recommended. (3) The TO-220 package with 0.45C/W junction-to-case thermal resistance enables 300W power dissipation with adequate heatsinking. The 175C maximum junction temperature provides thermal margin. The avalanche rating allows the device to absorb energy from inductive loads without external clamping, enhancing robustness in motor drive and inverter applications.

Pin Name Function
1 Gate MOSFET gate (control input)
2 Drain MOSFET drain (tab/heatsink)
3 Source MOSFET source (return)
  • SMPS primary switch with 100V rating and 7mOhm RDS(ON)
  • UPS inverter and battery management with 130A current rating
  • DC motor drive and H-bridge with avalanche ruggedness
  • Solar inverter power stage with 175C max junction
  • High-current DC-DC converter with 300W dissipation capability
Model Manufacturer Key Difference
IRFB4110PBF Infineon 100V, 180A, 3.7mOhm, stronger
IRFP4468PBF Infineon 100V, 195A, 2.6mOhm, TO-247
NTMFS5C612N onsemi 60V, 100A, 3.2mOhm, D2PAK-7
IPB044N15N5LF Infineon 150V, 120A, 4.4mOhm, D2PAK
FDB047N10A onsemi 100V, 85A, 4.7mOhm, D2PAK
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