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IRF5305STRLPBF

P-ch MOSFET, -55V, -31A, 60mOhm, D2PAK-3, logic-level gate, battery/motor drive

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Manufacturer Part：

IRF5305STRLPBF

Package：

D2PAK-3 / TO-263-3 (10.28 x 8.98 x 4.44 mm)

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Description

Product Overview

The IRF5305STRLPBF from Infineon (International Rectifier) is a -55V, -31A P-channel power MOSFET with 0.06 Ohm on-resistance in a D2PAK-3 (TO-263) surface-mount package. Designed for low-voltage high-current switching applications including battery management, motor drive, and load switching.

Key Specifications

Polarity P-Channel
VDS -55 V
ID (TC=25C) -31 A
RDS(on) (max) 0.060 Ohm @ VGS=-10V
Qg (typ) 47 nC
Power Dissipation 140 W @ TC=25C
Operating Temperature -55C to +175C

Features

  • Low 60 mOhm on-resistance for high-efficiency switching
  • -31A continuous drain current for high-power applications
  • D2PAK surface-mount package for automated assembly
  • Logic-level gate drive compatible (fully enhanced at VGS=-4.5V)

Applications

  • Battery management and protection circuits
  • Motor drive H-bridge high-side switch
  • Load switching and power routing
  • Hot-swap and OR-ing controllers

The IRF5305STRLPBF from Infineon (International Rectifier) is a -55V P-channel power MOSFET with -31A continuous drain current and 0.060 Ohm maximum on-resistance at VGS=-10V in a D2PAK-3 (TO-263) surface-mount package. The device is logic-level compatible, achieving low on-resistance at VGS=-4.5V, making it suitable for direct microcontroller drive in battery-powered applications. Typical gate charge is 47nC for moderate switching speeds. The P-channel architecture simplifies high-side switching without charge pump circuitry. Applications include battery management, motor drive, load switching, and hot-swap controllers.

The IRF5305STRLPBF is a P-channel enhancement-mode vertical DMOS power MOSFET. (1) P-Channel Structure: The source is connected to the positive supply and the drain to the load. When VGS is negative relative to the source (below the threshold), an inversion layer forms in the P-body creating a conduction channel between source and drain. (2) Low-Side vs High-Side: P-channel MOSFETs simplify high-side switching because the gate only needs to be pulled below the source voltage, which is connected to the positive rail. This eliminates the charge pump required for N-channel high-side drives. (3) Logic Level: At VGS=-4.5V, the device achieves low on-resistance, allowing direct drive from 5V logic. At VGS=-10V, RDS(on) drops to 0.060 Ohm maximum. (4) Body Diode: The intrinsic body diode conducts when VSD is positive, providing a freewheeling path in motor drive and inductive load applications.

Pin Name Type Function
1 Gate Input MOSFET gate control
2 Drain Output MOSFET drain (tab/heatsink)
3 Source Power MOSFET source (connected to V+)
  • Battery management and protection with high-side P-channel switching
  • Motor drive H-bridge high-side switch without charge pump
  • Load switching and power routing with logic-level gate drive
  • Hot-swap and OR-ing controllers in redundant power systems
Manufacturer Part Number Package Notes
Infineon IRF4905STRLPBF D2PAK-3 -55V, -74A, lower RDS(on)
Vishay IRFR5305TRPBF DPAK-3 Smaller package, same die
onsemi FDD8896 D2PAK-3 -40V, -45A, lower RDS(on)
STMicroelectronics STF30NF55 D2PAK-3 -55V, -30A
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