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IPG16N10S4-61

100V, 16A N-ch OptiMOS, 16mOhm Rds, SO-8, DC-DC and motor drive

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Manufacturer Part：

IPG16N10S4-61

Package：

SO-8 (PG-DSO-8) (5.00 x 6.00 x 1.75 mm)

Description

Product Overview

The IPG16N10S4-61 from Infineon is a 100 V, 16 A N-channel OptiMOS power MOSFET in a PG-DSO-8 (SO-8) package. Part of Infineon’s OptiMOS family, it combines low RDS(on) with fast switching performance, targeting DC-DC converters, motor drive, and load switch applications.

Key Specifications

VDS	100 V
ID (max)	16 A
RDS(on) max	16 mΩ @ VGS=10V
Qg typ	18 nC @ VGS=10V
VGS(th) typ	2.5 V
Package	PG-DSO-8 (SO-8)

Features

OptiMOS technology for low RDS(on) and low switching losses
100 V breakdown voltage for 48 V bus applications
Low gate charge for high-frequency operation
Compact SO-8 footprint
RoHS compliant

Applications

48 V DC-DC converters and telecom power
Motor drive and inverter stages
Load switches and hot-swap controllers
Battery management systems
Industrial power distribution

Product Introduction:IPG16N10S4-61 Product Introduction

The IPG16N10S4-61 is a 100 V N-channel power MOSFET from Infineon’s OptiMOS family, designed for high-efficiency power conversion in 48 V and higher voltage systems. The device features a maximum RDS(on) of 16 mΩ at VGS = 10 V and a continuous drain current rating of 16 A, making it suitable for medium-power DC-DC converters, motor drives, and load switch applications. The OptiMOS trench technology provides an excellent balance between on-state resistance and switching losses, with a typical total gate charge of only 18 nC. The SO-8 package is widely supported in PCB assembly and offers a compact footprint for space-constrained designs. The 100 V rating provides margin for 48 V nominal bus systems with transient requirements.

Working Principle:IPG16N10S4-61 Working Principle

The IPG16N10S4-61 is an N-channel enhancement-mode vertical DMOS power MOSFET fabricated using Infineon’s OptiMOS trench gate technology. When a gate-source voltage above the threshold is applied, an inversion layer forms in the P-body beneath the trench gate, creating a conduction channel. Current flows vertically from drain to source through the channel and the lightly doped drift region. The trench gate structure maximizes channel density while the optimized epitaxial layer and cell geometry minimize specific on-resistance. The 100 V blocking capability is achieved through careful design of the drift region doping and thickness. During switching, the gate driver must supply charge to the gate-source and gate-drain capacitances, and the low 18 nC total gate charge enables fast transitions with modest driver capability.

Pin Description:IPG16N10S4-61 Pin Definition and Functions

Pin	Name	Function
1	Source	Source terminal
2	Gate	Gate drive terminal
3	Source	Source terminal
4	Source	Source terminal
5-8	Drain	Drain terminals (connected to leadframe)

Application Scenarios:In which products and applications isIPG16N10S4-61 used

48 V Telecom DC-DC: Buck and half-bridge converter stages in 48 V input systems
Motor Drive Inverters: Three-phase inverter switches for BLDC and PMSM motors
Load Switching: High-side load switches with inrush current limiting in hot-swap applications
Battery Management: Charge and discharge path switching in 48 V battery systems
Industrial Power: Reverse polarity protection and power OR-ing in industrial supplies

Alternative Models:What chips are recommended as replacements for IPG16N10S4-61

Model	Manufacturer	VDS	ID	RDS(on)	Package	Notes
IRF7484MTRPBF	Infineon	100 V	12 A	22 mΩ	SO-8	Lower current, same family
FDD86102	onsemi	100 V	11 A	18 mΩ	SO-8	Similar performance
SI4892DY-T1-E3	Vishay	100 V	12 A	18 mΩ	SO-8	Alternative option
IPG20N10S4-61	Infineon	100 V	20 A	12 mΩ	SO-8	Higher current variant
BSZ100N10NS3G	Infineon	100 V	30 A	10 mΩ	PG-TDSON-8	Lower RDS, higher ID