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FQP30N06L

N-Channel logic-level MOSFET, 60V, 30A, 35mOhm @5V, TO-220

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Manufacturer Part：

FQP30N06L

Package：

TO-220

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Description

Product Overview

The FQP30N06L from onsemi is an N-channel MOSFET rated at 60V and 30A with logic-level gate drive. With Rds(on) of only 35mOhm at VGS=5V and guaranteed enhancement at VGS=4.5V, it can be driven directly from 5V microcontrollers without a gate driver. Packaged in TO-220.

Key Specifications

Type N-Channel Logic-Level MOSFET
VDS 60V
ID (continuous) 30A (at TC=25C)
Rds(on) 35mOhm (max at VGS=5V)
VGS(th) 1.0-2.0V (logic level)
Qg (total gate charge) 28nC
Power Dissipation 79W (at TC=25C)
Package TO-220
Operating Temperature -55 to +175 C (junction)

Features

  • Logic-level gate drive (fully enhanced at VGS=5V)
  • Rds(on) 35mOhm at VGS=5V
  • Direct MCU drive without gate driver
  • Low gate charge: 28nC for fast switching
  • 60V rating for 12V/24V systems
  • 30A continuous drain current

Applications

  • MCU-controlled motor switching
  • 5V Arduino/ESP32 load drivers
  • 12V automotive relay replacement
  • Solenoid and valve control

The FQP30N06L from onsemi is an N-channel logic-level power MOSFET specifically designed for direct microcontroller drive. Unlike standard MOSFETs that require 10V VGS for full enhancement, the FQP30N06L achieves its rated 35mOhm Rds(on) at only VGS=5V, making it ideal for 5V Arduino and ESP32 projects. The low threshold voltage (1.0-2.0V) ensures the MOSFET is fully off when the MCU output is LOW. The 28nC total gate charge is low enough that most MCU I/O pins can switch it at moderate frequencies without a dedicated gate driver. The 60V rating provides adequate margin for 12V and 24V systems, including automotive applications. At 10A load with 5V gate drive, the conduction loss is only 102 x 0.035 = 3.5W, easily managed with a small heatsink. The FQP30N06L is the go-to logic-level MOSFET for hobbyist and educational projects.

The FQP30N06L uses a planar MOSFET structure optimized for logic-level gate drive. The gate oxide thickness and channel geometry are designed so that the inversion layer fully forms at VGS=5V, achieving the minimum Rds(on). The threshold voltage is 1.0-2.0V, lower than standard MOSFETs (2-4V), which ensures some enhancement even at 3.3V logic levels (though Rds(on) will be higher than the 35mOhm spec). The 28nC total gate charge means an Arduino I/O pin (approx 20mA output current) can switch the MOSFET in approximately Q/I = 28nC/20mA = 1.4us, adequate for motor control at frequencies below 10kHz. For faster switching or higher frequencies, a gate driver (TC4420, MIC4422) reduces switching time and losses. The body diode provides a current path for inductive loads during off-time.

Pin Name Function
1 Gate Gate drive input (0-5V from MCU)
2 Drain Current flows in (connected to tab)
3 Source Current flows out (connect to GND)
  • Arduino 5V GPIO direct motor drive with 30A/60V logic-level MOSFET
  • 12V automotive relay replacement with 35mOhm on-resistance
  • ESP32 solenoid and valve control with 5V gate drive
  • LED strip dimmer with PWM from MCU at up to 10kHz
Model Manufacturer Key Difference
IRFZ44N Infineon 55V, 49A, NOT logic-level, needs 10V gate
IRLZ44N Infineon 55V, 47A, logic-level, similar
IRF540N Infineon 100V, 33A, NOT logic-level
2N7000 onsemi 60V, 200mA, small-signal logic-level
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