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FDV304P

-25V P-ch MOSFET, 1.1R RDS(on), -0.46A, logic-level gate, gate Zener ESD 6kV, SOT-23

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Manufacturer Part：

FDV304P

Package：

SOT-23-3 (2.90 x 1.30 x 1.00 mm)

Brand：

Product Categories：

Integrated Circuits ICs, MOSFETs

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Description

Product Overview

The FDV304P from onsemi is a P-channel enhancement-mode MOSFET rated at -25V VDS with 1.1 Ohm RDS(on) at VGS=-4.5V, -0.46A continuous drain current, and gate-source Zener for 6kV ESD protection in a SOT-23 package.

Key Specifications

Type	P-Channel Enhancement MOSFET
VDS	-25 V
VGS	-8 V max
ID (continuous)	-0.46 A
ID (pulsed)	-1.5 A
RDS(on) @ VGS=-4.5V	1.1 Ohm max
RDS(on) @ VGS=-2.7V	1.5 Ohm max
VGS(th)	-0.65 to -1.5 V
Total Gate Charge	1.1 nC typical
Input Capacitance	63 pF typical
Power Dissipation	0.35 W
ESD Rating	>6 kV HBM (gate Zener)
Operating Temperature	-55°C to +150°C
Package	SOT-23-3

Features

Low 1.1 Ohm RDS(on) at -4.5V gate drive with 1.1nC low gate charge
Logic-level gate drive (VGS(th) < 1.5V) for direct 3V circuit operation
Integrated gate-source Zener diode provides >6kV HBM ESD protection
Compact SOT-23 package for battery-powered portable applications

Applications

Battery load switching and power management in notebooks and phones
Logic-level high-side switching at 2.5V to 5V gate drive
Low-current load switching with ESD-protected gate

Product Introduction:FDV304P Product Introduction

The FDV304P from onsemi is a P-channel enhancement-mode MOSFET fabricated using high cell density DMOS (PowerTrench) technology, optimized for low on-resistance at low gate drive voltages. The device is rated at -25V drain-source voltage with -0.46A continuous drain current. The RDS(on) is 1.1 Ohm maximum at VGS=-4.5V and 1.5 Ohm at VGS=-2.7V, enabling efficient switching from 2.5V logic supplies. A unique gate-source Zener diode provides ESD protection exceeding 6kV per the Human Body Model, eliminating the need for external gate protection in most applications. The low threshold voltage (VGS(th) max = -1.5V) allows direct operation from 3V battery supplies. The total gate charge of only 1.1nC minimizes gate drive power and enables fast switching. The compact SOT-23 package is ideal for space-constrained battery-powered applications such as notebooks, cell phones, and portable electronics.

Working Principle:FDV304P Working Principle

The FDV304P is a P-channel enhancement-mode vertical DMOS MOSFET. (1) P-Channel Operation: Current flows from source to drain when the gate voltage is pulled below the source voltage (negative VGS), creating an inversion channel. The body diode is oriented with anode at drain and cathode at source. (2) PowerTrench Technology: The trench gate structure provides high cell density, reducing the specific on-resistance. The vertical current flow minimizes the die area needed for a given RDS(on). (3) Gate Zener: An integrated Zener diode between gate and source clamps gate voltage transients that exceed the gate oxide breakdown rating. When a positive ESD event raises the gate voltage above the Zener voltage, the Zener conducts and limits the voltage, protecting the thin gate oxide from damage. This provides >6kV HBM protection without external components. (4) Logic-Level Drive: The low threshold voltage (typical -0.86V) allows the MOSFET to be driven directly from 3V logic or battery supplies, with sufficient overdrive to achieve the rated RDS(on) at VGS=-2.7V.

Pin Description:FDV304P Pin Definition and Functions