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FAN3111E_F085

1A low-side gate driver, inverting input, TTL, 13V, SOT-23-5, MOSFET/IGBT drive

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Manufacturer Part：

FAN3111E_F085

Package：

SOT-23-5 (2.90 x 1.60 x 1.10 mm)

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Description

Product Overview

The FAN3111E from onsemi (Fairchild) is a 1A low-side gate driver with TTL-compatible input in a SOT-23-5 package. Designed for driving MOSFETs and IGBTs in power converters, it provides 1A peak output current with 13V supply capability.

Key Specifications

Peak Output Current 1 A (source and sink)
Supply Voltage 4.5 V to 13 V
Input Threshold TTL compatible (1.4V typ)
Propagation Delay 25 ns (typical)
Rise/Fall Time 12 ns / 10 ns (typical, 1nF load)
Operating Temperature -40C to +125C

Features

  • 1A peak source and sink current for MOSFET/IGBT gate drive
  • TTL-compatible input independent of VDD supply
  • 13V maximum supply for standard power MOSFET gate drive
  • 25ns typical propagation delay for high-frequency switching
  • SOT-23-5 ultra-compact footprint for space-constrained designs
  • Inverting or non-inverting input options (FAN3111E = inverting)

Applications

  • Low-side MOSFET gate drive in DC-DC converters
  • IGBT gate drive in motor control inverters
  • Power supply synchronous rectifier drive
  • LED driver switching FET control

The FAN3111E from onsemi (formerly Fairchild) is a 1A low-side gate driver with inverting TTL-compatible input in a SOT-23-5 package. The device is designed to drive N-channel MOSFETs or IGBTs in low-side switching applications. The 1A peak source and sink current capability ensures rapid gate charging and discharging for efficient switching. The TTL-compatible input threshold (1.4V typical) is independent of the VDD supply voltage, enabling direct interface with 3.3V or 5V logic. The 4.5V to 13V supply range supports standard gate drive voltages for power MOSFETs. The 25ns typical propagation delay and 12ns/10ns typical rise/fall times (1nF load) support high-frequency switching up to several hundred kHz. The ultra-compact SOT-23-5 footprint enables gate driver placement close to the switching device for minimum gate loop inductance. The FAN3111E suffix denotes the inverting input version; the FAN3111T provides a non-inverting input.

The FAN3111E uses a CMOS output stage with TTL-compatible input for low-side gate drive. (1) Input Stage: The input buffer uses a TTL threshold (1.4V typical) with 200mV hysteresis for noise immunity. The threshold is independent of VDD, allowing direct connection to 3.3V MCU outputs. The inverting configuration means the output is high when the input is low. (2) Level Translation: The input logic level is translated to the VDD supply domain. This allows a 3.3V logic signal to drive a 12V gate drive output. (3) Output Stage: Complementary N-channel and P-channel MOSFETs form a push-pull output. The P-channel provides sourcing current (gate charging) and the N-channel provides sinking current (gate discharging). Both are rated for 1A peak. (4) Under-Voltage Lockout: When VDD is below approximately 3.5V, the output is held low to prevent incomplete gate enhancement. (5) SOT-23-5: The compact package minimizes parasitic inductance in the gate drive loop, reducing voltage overshoot during fast switching transients.

Pin Name Type Function
1 IN Input Logic input (inverting, TTL compatible)
2 GND Ground Ground
3 VDD Power Supply (4.5-13V)
4 OUT Output Gate drive output (1A peak)
5 GND Ground Ground (thermal)
  • Low-side MOSFET gate drive in DC-DC converters at 1A peak
  • IGBT gate drive in motor control inverters with TTL input
  • Power supply synchronous rectifier drive with 25ns propagation delay
  • LED driver switching FET control in SOT-23-5 compact footprint
Manufacturer Part Number Package Notes
onsemi FAN3111T_F085 SOT-23-5 Non-inverting version
TI LM5114SD SOT-23-5 3A, non-inverting
Microchip MIC5014YM5-TR SOT-23-5 1.5A, inverting
onsemi NCP3410MNTWG DFN-6 3A, dual input
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