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ESD1014MUTAG

4-ch ESD diode, 3.3V, ±30kV IEC, 3.8pF, UDFN-10, AEC-Q101

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Manufacturer Part：

ESD1014MUTAG

Package：

UDFN-10 (2.6 x 2.6 x 0.55mm, 0.5mm pitch)

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Description

Product Overview

The ESD1014MUTAG is a 4-channel low-capacitance ESD protection diode array from onsemi with 3.3V working voltage, ±30kV IEC contact protection, and 3.8pF capacitance in a UDFN-10 package.

Key Specifications

Number of Channels 4 (unidirectional)
Working Voltage (VRWM) 3.3V
Breakdown Voltage (VBR) 5.0V min, 5.3V typical
Clamping Voltage (VC) 7.5V at 1A, 9.0V at 10A, 11V at 25A
Capacitance (I/O to GND) 3.8pF typical, 5.0pF max at 1MHz
Capacitance (I/O to I/O) 1.5pF typical, 3.0pF max
ESD Rating (IEC 61000-4-2) ±30kV contact, ±30kV air discharge
Peak Pulse Power 450W (8/20µs)
Peak Pulse Current 30A (8/20µs)
Leakage Current 5µA max at VRWM
AEC-Q101 Yes (SZ prefix version)
Operating Temperature -40°C to +125°C
Package UDFN-10 (2.6 x 2.6 x 0.55mm)

Features

  • 4-channel ESD protection for high-speed data lines
  • Ultra-low 3.8pF capacitance per channel
  • ±30kV IEC 61000-4-2 contact discharge protection
  • 11V clamping voltage at 25A for effective suppression
  • 3.3V working voltage for 3.3V logic lines
  • Steering (rail-to-rail) architecture
  • AEC-Q101 qualified (SZESD1014MUTAG version)
  • Ultra-compact UDFN-10 package (2.6 x 2.6mm)

Applications

  • USB 2.0 data and power line protection
  • Gigabit Ethernet line protection
  • DVI and HDMI interface protection
  • T1/E1 and T3/E3 telecom protection
  • General high-speed I/O ESD protection

The ESD1014MUTAG from onsemi is a 4-channel low-capacitance ESD protection diode array designed for high-speed data lines. It provides ±30kV IEC 61000-4-2 contact discharge protection on each channel with only 3.8pF typical capacitance to ground and 1.5pF channel-to-channel, preserving signal integrity on USB, HDMI, and Ethernet interfaces. The 3.3V working voltage is suitable for 3.3V logic rails. The steering (rail-to-rail) architecture clamps the signal voltage to within 11V at 25A peak pulse current, providing effective transient energy diversion. The device also withstands 450W peak pulse power (8/20µs waveform). An AEC-Q101 qualified version (SZESD1014MUTAG) is available for automotive applications. The ultra-compact UDFN-10 package (2.6 x 2.6mm) minimizes board space near connectors.

The ESD1014MUTAG uses a steering diode architecture where each I/O channel has two steering diodes: one from the I/O pin to V+ (positive rail) and one from the I/O pin to GND. A central TVS clamp diode between V+ and GND absorbs the transient energy. During normal operation, the I/O voltage remains within the working range (0 to 3.3V) and all diodes are reverse-biased, presenting only 3.8pF capacitance. When an ESD or surge event drives the I/O pin voltage above V+ + VF (approximately one diode drop above the positive rail), the upper steering diode conducts, routing current to the V+ rail. The TVS clamp then breaks down and absorbs the energy, limiting the voltage. Similarly, negative transients are routed through the lower steering diode to GND. The 11V clamping voltage at 25A ensures that downstream ICs are protected from voltage stress. The 3.8pF capacitance and 1.5pF channel-to-channel capacitance are low enough to preserve signal integrity on data lines up to several hundred MHz, including USB 2.0 (480Mbps) and Gigabit Ethernet (125MHz per pair).

Pin Name Type Description
1 N/C — Not connected
2 I/O1 I/O ESD protection channel 1
3 N/C — Not connected
4 I/O2 I/O ESD protection channel 2
5 VP Power Positive rail (connect to VCC or leave floating)
6 I/O3 I/O ESD protection channel 3
7 N/C — Not connected
8 I/O4 I/O ESD protection channel 4
9 N/C — Not connected
10 N/C — Not connected
Pad GND Power Ground (exposed center pad)

ESD1014MUTAG uses the UDFN-10 (2.6×2.6mm, Case 517AN) surface-mount package from onsemi: Pins 1,3,7,9 = I/O (bidirectional ESD protection channels), Pins 2,4,6,8 = NC (no connect internally), Pin 5 = VP (positive supply rail, connects to protected VCC), Exposed Pad = GND. The rail-to-rail topology clamps I/O voltages between VP and GND — the VP pin MUST be connected to the protected supply rail (typically VCC = 3.3V) for proper ESD steering. Pin 1 is identified by a corner chamfer or dot. The four I/O channels protect four data lines simultaneously. The NC pins can be connected to GND for improved EMI shielding. The UDFN-10 footprint is not pin-compatible with SOT-23-6 ESD devices.

  • USB 2.0: 4 channels protect D+, D-, VBUS, and ID; 3.8pF preserves 480Mbps signal integrity
  • Gigabit Ethernet: 4 channels protect both differential pairs; 1.5pF channel-to-channel cap maintains pair symmetry
  • HDMI/DVI: ±30kV IEC protects hot-plug interfaces; low capacitance preserves TMDS signal quality
  • Automotive: AEC-Q101 qualified SZESD1014MUTAG version for infotainment USB and display interfaces
  • Connector Area: UDFN-10 2.6×2.6mm package fits in congested connector areas on dense PCBs
Model Manufacturer Key Difference Package Specs
SZESD1014MUTAG onsemi AEC-Q101 automotive qualified version – –
ESD1014MUTAG onsemi Same device, industrial grade – –
PRTR5V0U4X NXP 4-ch, 5V, 0.95pF, micro-pack – –
TPD4E05U06DQAR TI 4-ch, 5.5V, 0.5pF, USON-10 – –
ESDA6V1-4BC6 ST 4-ch, 6.1V, 15pF, SOT-23-6 – –

ESD1014MUTAG is a 4-channel ESD protection diode from onsemi in UDFN-10 with 3.8pF capacitance. The SZESD1014MUTAG provides AEC-Q101 automotive qualification. The TPD4E05U06DQAR from TI offers 4-channel 0.5pF ESD for USB 3.0. The PRTR5V0U2X from Nexperia provides 2-channel 1pF for USB 2.0. The USBLC6-2SC6 from ST offers 2-channel ESD in SOT-23-6 at lower cost. The TPD2E2U06QDBZRQ1 provides automotive AEC-Q101 dual-channel ESD in SOT-23-3. Note: ESD1014MUTAG is obsolete — consider TPD4E05U06 or SZESD1014 as replacement.

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