The US1M-13-F is a 1A 1000V ultra-fast recovery rectifier diode from Diodes Incorporated in SMA (DO-214AC) package, with 75ns maximum reverse recovery time (trr). Ultra-fast recovery diodes are designed for high-frequency switching applications where the standard 1N4007 (2us trr) would dissipate excessive reverse recovery losses. The reverse recovery process: when a forward-biased diode is suddenly reverse-biased, stored charge in the PN junction must be removed before the diode blocks current. This stored charge appears as a brief reverse current spike (IRR), and the time for this current to decay to zero is trr. For the US1M, trr=75ns, meaning the diode recovers 27x faster than a 1N4007. This dramatically reduces switching losses: Prr = 0.5 x IRR x VR x trr x fsw. At 50kHz switching frequency and 400V reverse voltage, the US1M’s recovery loss is approximately 0.3W vs 8W for a 1N4007. The forward voltage drop is 1.7V at 1A (higher than the 1.1V of a standard rectifier due to the gold-doping used to speed recovery). The device is rated for 1A average rectified current, 30A peak surge current (8.3ms half-sine), and 1000V maximum repetitive reverse voltage (VRRM). The reverse leakage current is 5uA at 1000V at 25C. The SMA package provides 75C/W thermal resistance and is compatible with standard surface-mount assembly. The -13-F suffix specifies tape-and-reel, lead-free. Applications include: output rectifiers in switching power supplies, freewheeling diodes in motor drives, and snubber diodes.