TPS51116RGER


DDR power solution, VDDQ buck + 3A VTT LDO + VTTREF, VQFN-24

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Pieza del fabricante:

TPS51116RGER

Paquete:

VQFN-24 (4.0 x 4.0 x 0.88 mm)

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Descripción

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The TPS51116RGER from Texas Instruments is a complete DDR/DDR2/DDR3/DDR3L/LPDDR3/DDR4 memory power solution in a 24-pin VQFN package. It integrates a synchronous buck controller for VDDQ, a 3A sink/source LDO for VTT, and a buffered low-noise reference for VTTREF, supporting all DDR sleep state controls.

Especificaciones

Buck Controller (VDDQ) Synchronous, D-CAP or current mode
VDDQ Output Range 0.75V to 3.0V (2.5V/1.8V/1.5V/1.35V/1.2V presets)
VDDQ Input Range 3.0V to 28V
VDDQ Max Output Current 10A (external MOSFETs)
Switching Frequency 400kHz fixed
LDO (VTT) 3A sink/source tracking linear regulator
VTT Accuracy +/-20mV (vs VTTREF)
VTTREF Output Buffered, low-noise, 10mA, +/-20mV accuracy
VTT Capacitor Only 20uF ceramic required
S3 Support VTT high-Z (suspend to RAM)
S4/S5 Support VDDQ, VTT, VTTREF soft-off (suspend to disk)
VLDOIN External supply input to reduce LDO power loss
Protection Overvoltage, undervoltage, thermal shutdown
Power Good Yes (PGOOD output)
Temperatura de funcionamiento -40 to +85 C
Paquete VQFN-24 (4.0 x 4.0 mm)
Status Activo

Características

  • Complete DDR memory power: VDDQ + VTT + VTTREF
  • Supports DDR through DDR4 standards
  • Synchronous buck with D-CAP or current mode
  • 3A sink/source VTT LDO with external VLDOIN
  • Buffered VTTREF with +/-20mV accuracy
  • S3 (high-Z) and S4/S5 (soft-off) sleep state control
  • 400kHz fixed frequency, 100ns load step response
  • Overvoltage, undervoltage, thermal protection

Aplicaciones

  • DDR/DDR2/DDR3/DDR4 memory power supplies
  • SSTL-2, SSTL-18, SSTL-15 termination
  • Laptop and desktop memory modules
  • Embedded computing platforms

The TPS51116RGER from Texas Instruments is a complete DDR memory power supply solution in a 24-pin 4x4mm VQFN package. The RGE denotes VQFN-24 package, R denotes tape and reel (3000 pcs/reel). The device integrates three functions needed for DDR memory power: (1) a synchronous buck controller for VDDQ generation from 3-28V input at up to 10A using external MOSFETs, operating at 400kHz fixed frequency in either D-CAP mode for fastest transient response or current mode for ceramic output capacitor compatibility; (2) a 3A sink/source tracking LDO for VTT termination voltage that precisely tracks VTTREF/2 with only 20uF ceramic output capacitor; and (3) a buffered low-noise 10mA VTTREF reference output at half VDDQ with +/-20mV accuracy. The external VLDOIN pin allows connecting the LDO input to a lower voltage rail (like VDDQ itself) to significantly reduce LDO power dissipation. The device supports all DDR sleep states: S3 (suspend to RAM, VTT goes high-Z while VDDQ stays on) and S4/S5 (suspend to disk, VDDQ/VTT/VTTREF all soft-off).

The TPS51116RGER operates through three power subsystems: (1) VDDQ Buck Controller: A synchronous buck controller drives external N-channel MOSFETs to generate VDDQ (2.5V for DDR, 1.8V for DDR2, 1.5V for DDR3, 1.35V for DDR3L, 1.2V for LPDDR3/DDR4). The VDDQSET pin configures the output voltage. The controller uses adaptive on-time control at 400kHz, operating in D-CAP mode when COMP is tied to V5IN (fastest transient response, requires bulk output capacitors) or in current mode when a compensation network is connected to COMP (supports ceramic-only output capacitors). Current sensing uses either MOSFET RDS(ON) or an external sense resistor. (2) VTT LDO: A linear regulator generates VTT = VTTREF with 3A sink and source capability. The tracking architecture ensures VTT precisely follows VTTREF within +/-20mV. The VLDOIN pin accepts an external supply (typically VDDQ or a lower voltage) to reduce the LDO headroom and thus power dissipation. Only 20uF ceramic output capacitor is required due to the fast LDO transient response. (3) VTTREF Buffer: A low-noise buffered reference output at VDDQ/2 provides 10mA output current with +/-20mV accuracy. A resistor divider from VDDQSNS sets the reference voltage.

Grupo Pin Cuenta Tipo Descripción
Buck Control 6 E/S DRVH, DRVL, VBST, LL, CS, COMP
VDDQ Feedback 2 Entrada VDDQSNS, VDDQSET
LDO (VTT) 4 E/S VTT, VTTSNS, VTTGND, VLDOIN
VTTREF 1 Salida Buffered reference output
Controlar 4 Entrada S3, S5, MODE, PGOOD
Potencia 4 Potencia V5IN, GND, PGND, VDDQSET
  • DDR3 memory power for embedded processor with 5V input buck generating 1.5V VDDQ, 3A VTT LDO, and VTTREF buffer
  • DDR4 laptop memory with 12V input, 1.2V VDDQ, VLDOIN connected to VDDQ to minimize LDO loss, and S3/S4 sleep control
  • LPDDR3 mobile platform with 3.3V input, 1.2V VDDQ in D-CAP mode with ceramic capacitors, and 20uF VTT output
  • Industrial DDR2 memory with 24V input, 1.8V VDDQ at 10A, current mode with external sense resistor, and PGOOD monitoring
Modelo Fabricante DDR Support Paquete Notas
TPS51200A TI DDR2/3 HTSSOP-20 VTT LDO only (no buck)
TPS51916 TI DDR3/4 VQFN-24 Newer, enhanced features
ISL6271 Renesas DDR2/3 QFN-24 Similar integrated solution
NCP51400 onsemi DDR3/4 QFN-20 VTT LDO with tracking
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Tel / WhatsApp: +86 13760382860

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Materialparts is a professional electronic component supplier based in Shenzhen, China, with over 20 years of global trading experience. We integrate component procurement, quality inspection, technical support, customized packaging, and global delivery services to provide one-stop supply chain solutions. Our business covers industrial control, automotive electronics, consumer electronics, medical devices and other industries. We always adhere to genuine sources, stable supply and considerate after-sales service.

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Email: info@materialparts.com
Tel / WhatsApp: +86 13760382860
Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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